公开(公告)号：US20240153975A1

公开(公告)日：2024-05-09

申请号：US18495179

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Minsung HEO ,  Jongwoo HONG ,  Insung JOE

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion devices, a color filter arranged on the substrate, a reflective absorption layer on the color filter and comprising at least one of tungsten, titanium, and aluminum, an anti-reflective layer arranged on the reflective absorption layer, and a plurality of micro lenses on the anti-reflective layer. The color filter may include a plurality of dielectric layers extending in a first direction that is parallel to a rear surface of the substrate, the plurality of dielectric layers having different thicknesses in a second direction that is perpendicular to the rear surface of the substrate and perpendicular to the first direction, such that the plurality of dielectric layers includes at least one dielectric layer having a thickness in the second direction that varies along the first direction.

公开(公告)号：US20230197746A1

公开(公告)日：2023-06-22

申请号：US18066656

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Hyunchul Kim ,  Junhong Kim ,  Kwangmin Lee ,  Beomsuk Lee ,  Insung Joe ,  Jinsun Pyo

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of, wherein the plurality of color filters include first and second color filters configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a first and second regions having respective, different first and second thicknesses, and a boundary region between the first region and the second region that vertically overlaps the first color filter and is horizontally offset from a vertical central axis of the grid structure.

公开(公告)号：US20200083268A1

公开(公告)日：2020-03-12

申请号：US16387106

申请日：2019-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongki KIM ,  Donghyun KIM ,  Minkyung KIM ,  Minkwan KIM

IPC: H01L27/146 ,  H01L27/30

Abstract: An image sensor is disclosed. The image sensor may include a plurality of unit pixels, a color filter array provided on the plurality unit pixels, the color filter array including color filters, an anti-reflection layer disposed between the plurality of unit pixels and the color filter array, and a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other. A width of the upper portion of the fence pattern may be greater than a width of the lower portion.

公开(公告)号：US20240321911A1

公开(公告)日：2024-09-26

申请号：US18537644

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Joonhyuk HWANG ,  Jonghyun GO ,  Changkyu LEE

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor having a structure in which a light-blocking film having an excellent light-blocking effect is provided in a light-blocking region includes a first substrate including a first surface and a second surface, the first surface including a plurality of transistors, and the second surface being opposite to the first surface and configured to receive light, the first substrate comprising a pixel array region and a light-blocking region, an anti-reflection structure on the second surface of the first substrate in the pixel array region and the light-blocking region, and a light-blocking structure on the anti-reflection structure in the light-blocking region, wherein the light-blocking structure comprises a plurality of film that are sequentially stacked, the plurality of film including at least a first conductive film, a first insulating film, and a second conductive film.

公开(公告)号：US20230023774A1

公开(公告)日：2023-01-26

申请号：US17696968

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkwan KIM ,  Daeeun JEONG ,  Kyungtae NAM

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer including an amorphous material, forming a lower electrode layer on the first blocking layer, and forming a magnetic tunnel junction structure layer on the lower electrode layer.

公开(公告)号：US20250040279A1

公开(公告)日：2025-01-30

申请号：US18589834

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Jongwoo HONG ,  Jonghyun GO ,  Haneul KIM ,  Chang Kyu LEE ,  Keun Yeong CHO ,  Joonhyuk HWANG

IPC: H01L27/146

Abstract: An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

公开(公告)号：US20230163148A1

公开(公告)日：2023-05-25

申请号：US17991063

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younsu HA ,  Dongchan KIM ,  Minkwan KIM ,  Minju YOON ,  Hwiyoung JEONG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14685 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636

Abstract: Disclosed is an image sensor comprising a substrate including a pixel area and an optically black area and having a first surface and a second surface that are opposite to each other, a plurality of color filters on the second surface of the substrate on the pixel area, and a first optically black pattern in a first recess on the second surface of the substrate on the optically black area. The first optically black pattern includes a material that is the same as a material of one of the color filters. Top surfaces of the color filters and a top surface of the first optically black pattern are at the same level.

公开(公告)号：US20230120066A1

公开(公告)日：2023-04-20

申请号：US17856140

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Chang Kyu LEE ,  In Sung JOE ,  Junhong KIM ,  Jinsun PYO

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a pixel isolation pattern in the substrate and defining unit pixel regions in the substrate, color filters on the substrate and corresponding to the unit pixel regions, respectively, a low-refractive index pattern between adjacent color filters of the color filters to at least partially isolate the adjacent color filters from direct contact with each other, an insulating structure between the substrate and the color filters, and a light blocking pattern vertically overlapping with the pixel isolation pattern. The light blocking pattern is within the insulating structure and is isolated from direct contact with the low-refractive index pattern.

公开(公告)号：US20230040060A1

公开(公告)日：2023-02-09

申请号：US17730739

申请日：2022-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Minkwan KIM ,  Minho JANG

IPC: H01L27/146

Abstract: Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

公开(公告)号：US20220139989A1

公开(公告)日：2022-05-05

申请号：US17490761

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inyong PARK ,  Minkwan KIM ,  In Sung JOE ,  Jinhyung KIM ,  Dhami PARK ,  Kisang YOON

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor includes a first substrate including a focus pixel region and pixel regions around the focus pixel region, each of the focus pixel region and the pixel regions including at least one photoelectric conversion region, color filters provided on the focus pixel region and the pixel regions, respectively, and on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. The micro lenses include an auto-focus lens on the focus pixel region, a first micro lens adjacent to the auto-focus lens, and a standard micro lens spaced apart from the auto-focus lens.