Electronic device for controlling communication function, and operating method therefor

    公开(公告)号:US12232019B2

    公开(公告)日:2025-02-18

    申请号:US17722173

    申请日:2022-04-15

    Abstract: Various embodiments of the present disclosure relate to a device and method for controlling a communication function in an electronic device. An electronic device comprises: a wireless communication circuit for supporting first communication and second communication; memory; and at least one processor, the at least one processor configured to: check identification information about a network when connected to the network through the first communication, determine whether the network supports the second communication, on the basis of the identification information about the network and network information related to the second communication, set, on the basis of whether the network supports the second communication, whether a function, related to the second communication, of the electronic device is activated; and transmit, to the network information related to whether the function, related to the second communication, of the electronic device is activated.

    Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same
    3.
    发明授权
    Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same 有权
    包括金属氧化物半导体场效应晶体管的半导体器件及其制造方法

    公开(公告)号:US08927367B2

    公开(公告)日:2015-01-06

    申请号:US13736457

    申请日:2013-01-08

    Abstract: A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.

    Abstract translation: 制造半导体器件的方法可以包括图案化衬底以形成沟槽,形成牺牲层以覆盖沟槽的内表面,牺牲层具有单层结构,通过各向同性蚀刻牺牲层形成牺牲图案,使得 牺牲层保留在沟槽的底表面上,使用牺牲图案作为离子掩模在沟槽的侧壁中形成轻掺杂区域,去除牺牲图案,以及在沟槽中顺序地形成栅极绝缘层和栅极电极层。

Patent Agency Ranking