Abstract:
Various embodiments of the present disclosure relate to a device and method for controlling a communication function in an electronic device. An electronic device comprises: a wireless communication circuit for supporting first communication and second communication; memory; and at least one processor, the at least one processor configured to: check identification information about a network when connected to the network through the first communication, determine whether the network supports the second communication, on the basis of the identification information about the network and network information related to the second communication, set, on the basis of whether the network supports the second communication, whether a function, related to the second communication, of the electronic device is activated; and transmit, to the network information related to whether the function, related to the second communication, of the electronic device is activated.
Abstract:
An electronic device including a communication circuitry, a processor, and a memory is provided. The processor of the electronic device receives a user equipment (UE) capability enquiry that includes information indicating the number of carrier aggregation (CA) combinations associated with a network from the network using the communication circuitry and determines UE capability information based on at least one of the number of default CA combinations of the electronic device, the number of CA combinations of a region associated with the network, the number of CA combinations of a country associated with the network, the number of CA combinations corresponding to a supported frequency band of a mobile network operator (MNO) associated with the network, and the number of CA combinations associated with the network.
Abstract:
A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.