公开(公告)号：US20160049197A1

公开(公告)日：2016-02-18

申请号：US14744605

申请日：2015-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-kook PARK ,  Yeong-taek LEE ,  Chi-weon YOON

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C5/025 ,  G11C7/18 ,  G11C8/14 ,  G11C11/1653 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C16/08 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/71 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device is provided including a cell region including at least one cell layer, each cell layer including multiple first lines and multiple second lines; and a control region including at least one control layer. The at least one control layer includes multiple circuit regions for performing a memory operation on the cell region. The multiple first lines include at least one first signal line through which a first signal from a first circuit region of the control layer is transmitted to a second circuit region of the control layer.

Abstract translation: 提供了一种存储器件，其包括包括至少一个单元层的单元区域，每个单元层包括多条第一行和多条第二行; 以及包括至少一个控制层的控制区域。 所述至少一个控制层包括用于对单元区域执行存储器操作的多个电路区域。 多个第一行包括至少一个第一信号线，来自控制层的第一电路区域的第一信号通过该第一信号线传输到控制层的第二电路区域。