公开(公告)号：US09805444B2

公开(公告)日：2017-10-31

申请号：US14957970

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choong-jae Lee ,  Gwan-hyeob Koh ,  Dae-shik Kim ,  Bo-young Seo

IPC: G09G5/36 ,  G06T1/60 ,  G06F12/00 ,  G11C5/02 ,  G11C11/16

CPC classification number: G06T1/60 ,  G06F12/00 ,  G06F12/0238 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2360/12 ,  G09G2360/18 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1695

Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.