公开(公告)号：US20180204867A1

公开(公告)日：2018-07-19

申请号：US15676069

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-shik Kim ,  Gwan-hyeob Koh

IPC: H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/78 ,  H04N5/353 ,  H04N5/3745 ,  H04N9/07 ,  H04N9/04

CPC classification number: H01L27/14634 ,  H01L24/80 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2224/80895 ,  H01L2924/1431 ,  H01L2924/1443 ,  H01L2924/146 ,  H04N5/3532 ,  H04N5/37455 ,  H04N5/378 ,  H04N5/78 ,  H04N5/907 ,  H04N9/045 ,  H04N9/07 ,  H04N2209/042

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) with a simplified stacked structure and improved operation characteristics includes an upper chip, in which a plurality of pixels are arranged in a two-dimensional array structure, and a lower chip below the upper chip including a logic region having logic circuits and a memory region having embedded therein magnetic random access memory (MRAM) used as image buffer memory for storing image data processed by the logic region.

公开(公告)号：USRE49478E1

公开(公告)日：2023-03-28

申请号：US17121968

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-shik Kim ,  Gwan-hyeob Koh

IPC: H04N9/04 ,  H01L27/146 ,  H01L23/00 ,  H04N5/78 ,  H04N23/12 ,  H04N23/68 ,  H04N25/75 ,  H04N25/447 ,  H04N25/531 ,  H04N25/616 ,  H04N25/772 ,  H04N25/778 ,  H04N5/907

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) with a simplified stacked structure and improved operation characteristics includes an upper chip, in which a plurality of pixels are arranged in a two-dimensional array structure, and a lower chip below the upper chip including a logic region having logic circuits and a memory region having embedded therein magnetic random access memory (MRAM) used as image buffer memory for storing image data processed by the logic region.

公开(公告)号：US10157951B2

公开(公告)日：2018-12-18

申请号：US15676069

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-shik Kim ,  Gwan-hyeob Koh

IPC: H04N9/04 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/78 ,  H04N5/353 ,  H04N5/3745 ,  H04N9/07 ,  H04N5/907

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor (CIS) with a simplified stacked structure and improved operation characteristics includes an upper chip, in which a plurality of pixels are arranged in a two-dimensional array structure, and a lower chip below the upper chip including a logic region having logic circuits and a memory region having embedded therein magnetic random access memory (MRAM) used as image buffer memory for storing image data processed by the logic region.

公开(公告)号：US09805444B2

公开(公告)日：2017-10-31

申请号：US14957970

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choong-jae Lee ,  Gwan-hyeob Koh ,  Dae-shik Kim ,  Bo-young Seo

IPC: G09G5/36 ,  G06T1/60 ,  G06F12/00 ,  G11C5/02 ,  G11C11/16

CPC classification number: G06T1/60 ,  G06F12/00 ,  G06F12/0238 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2360/12 ,  G09G2360/18 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1695

Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.