公开(公告)号：US20170169558A1

公开(公告)日：2017-06-15

申请号：US15291590

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Soo KIM ,  Jin Kwan KIM ,  Chung Sam JUN ,  Yu sin YANG ,  Soo Seok LEE

IPC: G06T7/00 ,  H01J37/28 ,  G01Q30/02 ,  G06T7/50 ,  G06K9/46

CPC classification number: G06T7/0004 ,  G01Q30/02 ,  G06K9/4604 ,  G06T7/41 ,  G06T7/50 ,  G06T7/529 ,  G06T2207/10028 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/225 ,  H01J2237/281

Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.

公开(公告)号：US20230101968A1

公开(公告)日：2023-03-30

申请号：US17827231

申请日：2022-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Woo RYOO ,  Da Hee YOON ,  Jung Hoon BYUN ,  Dong-Ryul LEE ,  Woo Yun LEE ,  Dong Chul IHM ,  Chung Sam JUN

IPC: G01J3/44 ,  G01N21/65 ,  G01N21/95

Abstract: A semiconductor device measuring device includes: a light generator which generates light; a polarizer which polarizes the light; a wafer stage including a first load port on which an undoped reference wafer is loaded, and a second load port on which a doped sample wafer is loaded, the wafer stage being movable to first and second positions at which the polarized light is incident on the reference wafer and the sample wafer, respectively; a spectroscope which collects first and second Raman spectral information of light reflected from the reference and sample wafers, respectively; a photodetector which detects first and second Raman scattering signals based on the first and second Raman spectral information, respectively; a spectrum corrector which corrects the second Raman scattering signal using the first Raman scattering signal; and a controller which calculates a concentration of the dopant of the sample wafer using the corrected scattering signal.

公开(公告)号：US20190114755A1

公开(公告)日：2019-04-18

申请号：US15937551

申请日：2018-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Sil LEE ,  Sung Yoon RYU ,  Young Hoon SOHN ,  Chung Sam JUN

IPC: G06T7/00 ,  G01J5/02 ,  G01N25/72 ,  H04N5/33

Abstract: According to one embodiment, a semiconductor chip inspection device includes a conveyor, an image capture device, and an analysis system. The conveyor provides a transfer path on which a semiconductor chip heated during a manufacturing process is moved. The image capture device is disposed above the transfer path and is configured to generate a thermographic image by imaging the semiconductor chip including capturing a plurality of thermographic images at different focal points in a thickness direction of the semiconductor chip. The analysis system is configured to compare the plurality of thermographic images with a plurality of standard images provided in advance, and to detect a region in which a temperature differential between a thermographic image and a respective standard image exceeds a reference value.