公开(公告)号：US20190295889A1

公开(公告)日：2019-09-26

申请号：US16176943

申请日：2018-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Hee BAI ,  Sung Woo KANG ,  Kee Sang KWON ,  Dong Seok LEE ,  Sang Hyun LEE ,  Jeong Yun LEE ,  Yong-Ho JEON

IPC: H01L21/768 ,  H01L21/8234 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device with improved product reliability and a method of fabricating the semiconductor are provided. The semiconductor device includes a substrate, a gate electrode on the substrate, a first spacer on a sidewall of the gate electrode, a conductive contact on a sidewall of the first spacer to protrude beyond a top surface of the gate electrode, a trench defined by the top surface of the gate electrode, a top surface of the first spacer, and sidewalls of the contact, an etching stop layer extending along at least parts of sidewalls of the trench and a bottom surface of the trench, and a capping pattern on the etching stop layer to fill the trench, wherein the capping pattern includes silicon oxide or a low-k material having a lower permittivity than silicon oxide.