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公开(公告)号：US20160282583A1
公开(公告)日：2016-09-29
申请号：US15072660
申请日：2016-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-woo KIM
CPC classification number: G02B27/646 , G02B9/34 , G02B13/04
Abstract: A single focus lens comprising: a first lens group having a negative refractive power; a second lens group having a positive refractive power, the second lens group being arranged to move in a direction that is transverse to an optical axis of the single focus lens; a third lens group having a negative refractive power that is arranged to perform a focusing function; and a rear lens group disposed between the third lens group and an image side of the single focus lens, wherein the first lens group, the second lens group, the third lens group, and the rear lens group are ordered sequentially from an object side of the single focus lens to the image side of the single focus lens.
Abstract translation: 一种单焦点透镜，包括：具有负折光力的第一透镜组; 具有正屈光力的第二透镜组，所述第二透镜组被布置成在横向于所述单焦点透镜的光轴的方向上移动; 具有负折射力的第三透镜组，被配置为执行聚焦功能; 以及设置在所述单焦点透镜的第三透镜组和像侧之间的后透镜组，其中所述第一透镜组，所述第二透镜组，所述第三透镜组和所述后透镜组从所述第一透镜组的物体侧顺序排列 单焦点透镜到单焦点透镜的像侧。
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公开(公告)号：US20230343787A1
公开(公告)日：2023-10-26
申请号：US18216041
申请日：2023-06-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-chan SUH , Gi-gwan PARK , Dong-woo KIM , Dong-suk SHIN
IPC: H01L27/092 , H01L21/8238 , H01L29/165 , H01L29/66 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/786
CPC classification number: H01L27/0924 , H01L21/823814 , H01L29/165 , H01L21/823821 , H01L21/823878 , H01L29/6656 , H01L29/66545 , H01L29/045 , H01L29/0665 , H01L29/42392 , H01L29/78696 , H01L27/092 , H01L21/823807
Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
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公开(公告)号：US20190319028A1
公开(公告)日：2019-10-17
申请号：US16453721
申请日：2019-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-chan SUH , Gi-gwan PARK , Dong-woo KIM , Dong-suk SHIN
IPC: H01L27/092 , H01L29/786 , H01L29/423 , H01L21/8238 , H01L29/06 , H01L29/66 , H01L29/165 , H01L29/04
Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
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公开(公告)号：US20170250261A1
公开(公告)日：2017-08-31
申请号：US15443160
申请日：2017-02-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-woo KIM , Hyun-jung LEE , Sun-jung KIM , Seung-hun LEE , Keum-seok PARK , Edward Namkyu CHO
IPC: H01L29/49 , H01L29/66 , H01L29/786 , H01L29/06 , H01L29/423
CPC classification number: H01L29/66742 , B82Y10/00 , H01L29/0653 , H01L29/0673 , H01L29/1037 , H01L29/1079 , H01L29/41725 , H01L29/42392 , H01L29/515 , H01L29/66439 , H01L29/775 , H01L29/78618 , H01L29/78696
Abstract: A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes from a substrate in a first direction. The nanosheets are spaced from an upper surface of the fin-type active area and include channel regions. The gate is over the fin-type active area. The source/drain region is connected to the nanosheets. The insulating spacers are in the fin-type active area and between the nanosheets. Air spaces are between the insulating spacers and the source/drain region based on positions of the insulating spacers.
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公开(公告)号：US20210305253A1
公开(公告)日：2021-09-30
申请号：US17345090
申请日：2021-06-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-chan SUH , Gi-gwan PARK , Dong-woo KIM , Dong-suk SHIN
IPC: H01L27/092 , H01L21/8238 , H01L29/165 , H01L29/66 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/786
Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
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Patent Agency Ranking
公开(公告)号：US20170176721A1
公开(公告)日：2017-06-22
申请号：US15371509
申请日：2016-12-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-woo KIM , Shuji YONEYAMA
CPC classification number: G02B13/0045 , G02B5/005 , G02B9/18 , G02B13/006 , G02B13/04 , G02B27/0025 , G02B27/646
Abstract: A single focus lens and a photographing apparatus including the single focus lens are provided. The photographing apparatus includes a single focus lens comprising: a first lens group having a positive refractive power, the first lens group including a first negative lens and a second negative lens arranged in succession at a most object side of the first lens group; a second lens group having a negative refractive power; and a third lens group having a positive refractive power and including a positive lens and a negative lens. The first to third lens groups are sequentially arranged in a direction from an object side to an image side.
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公开(公告)号：US20250151385A1
公开(公告)日：2025-05-08
申请号：US19018870
申请日：2025-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-chan SUH , Gi-gwan PARK , Dong-woo KIM , Dong-suk SHIN
Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
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公开(公告)号：US20170365604A1
公开(公告)日：2017-12-21
申请号：US15611893
申请日：2017-06-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-chan SUH , Gi-gwan PARK , Dong-woo KIM , Dong-suk SHIN
IPC: H01L27/092 , H01L29/06 , H01L21/8238 , H01L29/04 , H01L29/66 , H01L29/165
CPC classification number: H01L27/0924 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L27/092 , H01L29/045 , H01L29/0665 , H01L29/165 , H01L29/42392 , H01L29/66545 , H01L29/6656 , H01L29/78696
Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
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公开(公告)号：US20170332077A1
公开(公告)日：2017-11-16
申请号：US15524055
申请日：2015-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dai-woong CHOI , Woong-il CHOI , Dong-woo KIM , A-rang LEE , Jong-seok LEE
IPC: H04N19/124 , H04N19/40
Abstract: Provided is a method of determining whether an image is to be re-encoded, the method including obtaining a first quantization matrix from an image file including the image, the image being encoded by quantization based on the first quantization matrix including a plurality of first quantization parameters; obtaining a second quantization matrix from a re-encoding device, the second quantization matrix including a plurality of second quantization parameters and having the same size as the first quantization matrix; determining a comparison coefficient based on elements greater than ‘0’ among elements of a comparison matrix obtained by subtracting the first quantization matrix from the second quantization matrix; and determining that the image is to be decoded by inverse quantization based on the first quantization matrix and the decoded image is to be re-encoded by quantization based on the second quantization matrix, when the comparison coefficient is greater than a first threshold value.
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公开(公告)号：US20190141492A1
公开(公告)日：2019-05-09
申请号：US16239687
申请日：2019-01-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-ok CHA , Dong-woo KIM , Young-ri KIM , Ji-yeon YOO , Ju-youn LEE
Abstract: A mobile communication terminal and a method of recommending an application or content by providing information regarding a terminal status obtained by the mobile communication terminal when a connection device is connected to the mobile communication terminal without having to look for the application or content. The mobile communication terminal includes a connection status determining unit which determines a connection status of a connection device and the mobile communication terminal, a terminal status storage unit which stores information regarding a terminal status of the mobile communication terminal; and a recommended target executing unit which determines a recommended application based on the connection status and the information regarding the terminal status of the mobile communication terminal.
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