公开(公告)号：US11837273B2

公开(公告)日：2023-12-05

申请号：US17872720

申请日：2022-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C29/02 ,  G11C29/50 ,  G11C5/04 ,  G11C7/10

CPC classification number: G11C11/4072 ,  G11C5/04 ,  G11C11/408 ,  G11C11/409 ,  G11C29/022 ,  G11C29/028 ,  G11C29/50008 ,  H01L23/49838 ,  H01L25/0655 ,  G11C7/109 ,  G11C7/1063 ,  G11C7/1075 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US09805769B2

公开(公告)日：2017-10-31

申请号：US14697634

申请日：2015-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C5/04 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C11/4072 ,  G11C29/02 ,  G11C29/50 ,  G11C7/10

CPC classification number: G11C11/4072 ,  G11C5/04 ,  G11C7/1063 ,  G11C7/1075 ,  G11C7/109 ,  G11C11/408 ,  G11C11/409 ,  G11C29/022 ,  G11C29/028 ,  G11C29/50008 ,  H01L23/49838 ,  H01L25/0655 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US10971208B2

公开(公告)日：2021-04-06

申请号：US16734821

申请日：2020-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C29/02 ,  G11C29/50 ,  G11C5/04 ,  G11C7/10

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US10734059B2

公开(公告)日：2020-08-04

申请号：US16674554

申请日：2019-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  G11C29/50 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C5/04 ,  G11C29/02 ,  H01L25/065 ,  G11C7/10

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US11417386B2

公开(公告)日：2022-08-16

申请号：US17205832

申请日：2021-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  H01L23/498 ,  G11C5/04 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  G11C29/02 ,  G11C29/50 ,  G11C7/10

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US11328760B2

公开(公告)日：2022-05-10

申请号：US16527415

申请日：2019-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  G11C5/04 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C29/02 ,  G11C29/50 ,  G11C7/10

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

公开(公告)号：US10418087B2

公开(公告)日：2019-09-17

申请号：US15640854

申请日：2017-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyung Lee ,  JungSik Kim ,  Youngdae Lee ,  Duyeul Kim ,  Sungmin Yim ,  Kwangil Park ,  Chulsung Park

IPC: G11C11/4072 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/498 ,  G11C29/02 ,  G11C29/50 ,  G11C5/04 ,  G11C7/10

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.