公开(公告)号：US09660091B2

公开(公告)日：2017-05-23

申请号：US14453137

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su Kim ,  Myung-kwan Ryu ,  Kyoung-seok Son ,  Sung-hee Lee

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  G09G3/36 ,  H01L29/49

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0426 ,  H01L29/4908 ,  H01L29/78645

Abstract: A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

公开(公告)号：US09791600B2

公开(公告)日：2017-10-17

申请号：US13690181

申请日：2012-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-hwan Choi ,  Yun-hee Kim ,  Eok-su Kim ,  Jung-mok Bae ,  Hoon Song ,  Kang-hee Won ,  Yoon-sun Choi

IPC: G02B26/00 ,  G02F1/03 ,  G02B1/06 ,  G02F1/133 ,  G02B3/14 ,  G02B3/00 ,  G09G5/00

CPC classification number: G02B3/14 ,  G02B3/0006 ,  G02B26/005 ,  G09G5/00

Abstract: Provided is a micro-lens capable of changing a focal length. The micro-lens includes a plurality of electrodes, and an electrowetting liquid layer that is separable from the electrodes and that has a focal length that is controlled by a voltage applied to the electrodes.

公开(公告)号：US08982445B2

公开(公告)日：2015-03-17

申请号：US13889827

申请日：2013-05-08

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R&DB Foundation

Inventor： Eok-su Kim ,  Yong-joo Kwon ,  Jung-mok Bae ,  Yoon-sun Choi ,  Jung-hoon Lee ,  Seung-yul Choi

IPC: G02B26/00 ,  G02B3/14

CPC classification number: G02B26/005 ,  G02B3/14

Abstract: A variable optical device array includes: a transparent substrate; an addressing layer including an electrode wire arranged on the transparent substrate; a barrier wall portion disposed on the addressing layer to define cell regions and including conductive barrier walls that are electrically connected to the electrode wire, wherein pairs of the conductive barrier walls are arranged to form double walls; an insulation material filling a region between each pair of conductive barrier walls; a conductive first fluid and a nonconductive second fluid disposed in each of the cell regions, wherein the first and second fluids are not mixed; an insulation coating layer disposed on a top surface of each of the conductive barrier walls and on side surfaces of each of the cell regions; a transparent electrode layer covering the cell regions; and a voltage applying unit to apply a voltage between the transparent electrode layer and the addressing layer.

Abstract translation: 可变光学器件阵列包括：透明衬底; 寻址层，其包括布置在所述透明基板上的电极线; 设置在所述寻址层上以限定单元区域并且包括电连接到所述电极线的导电阻挡壁的阻挡壁部分，其中所述导电阻挡壁布置成形成双壁; 填充每对导电阻挡壁之间的区域的绝缘材料; 布置在每个单元区域中的导电第一流体和非导电的第二流体，其中第一和第二流体不混合; 绝缘涂层，设置在每个导电阻挡壁的顶表面和每个单元区域的侧表面上; 覆盖单元区域的透明电极层; 以及电压施加单元，用于在透明电极层和寻址层之间施加电压。

公开(公告)号：US08916914B2

公开(公告)日：2014-12-23

申请号：US13942831

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su Kim ,  Sun-hee Lee

IPC: H01L21/48 ,  H01L29/15

CPC classification number: H01L29/151 ,  H01L29/78681 ,  H01L29/78696

Abstract: A field effect transistor (FET) includes first and second channels stacked on a substrate, the first and second channels formed of a transition metal dichalcogenide, a source electrode and a drain electrode contacting both the first channel and the second channel, each of the source electrode and the drain electrode having one end between the first channel and the second channel, and a first gate electrode corresponding to at least one of the first channel and the second channel.

Abstract translation: 场效应晶体管（FET）包括堆叠在衬底上的第一和第二通道，由过渡金属二硫属元素化合物形成的第一和第二通道，与第一通道和第二通道两者接触的源电极和漏电极，源极 电极和漏电极，其一端位于第一通道和第二通道之间，第一栅电极对应于第一通道和第二通道中的至少一个。