公开(公告)号：US20240381643A1

公开(公告)日：2024-11-14

申请号：US18616343

申请日：2024-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngwoo Kim ,  Juyeon Jung ,  Byoungtaek Kim ,  Gwangwe Yoo

IPC: H10B43/27 ,  H01L23/00 ,  H10B41/27

Abstract: A semiconductor device includes a gate electrode structure including gate electrodes spaced apart in a first direction perpendicular to an upper surface of a substrate, each gate electrode extending in a second direction parallel to the upper surface of the substrate, a memory channel structure, and a support pattern array including support patterns spaced apart in the second direction and a third direction crossing the second direction, wherein each support pattern has a shape including three vertices and three sides, and wherein a first vertex of a first support pattern closest to a second support pattern and a first vertex of the second support pattern closest to the first support pattern are not aligned in the third direction but have different positions in the second direction.