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公开(公告)号:US20240371767A1
公开(公告)日:2024-11-07
申请号:US18654182
申请日:2024-05-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myung Joo Park , Jae Won Hwang , Ho Jin Lee
IPC: H01L23/528 , H01L23/522
Abstract: A semiconductor device comprises a substrate including a first surface and a second surface opposite to each other in a first direction, an active pattern on the first surface of the substrate and extending in a second direction, a field insulating film on the first surface of the substrate and covering sidewalls of the active pattern, a power rail on the second surface of the substrate and extending in the second direction, a via trench on one side of the active pattern and penetrating through the field insulating film, and a power rail via filling the via trench and connected to the power rail, in which the power rail via includes a first sub-film formed as a single film, and a second sub-film on the first sub-film and including barrier films extending along inner sidewalls of the via trench and a filling film between the barrier films.
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2.
公开(公告)号:US10770447B2
公开(公告)日:2020-09-08
申请号:US16400465
申请日:2019-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ho Jin Lee , Seok Ho Kim , Kwang Jin Moon , Byung Lyul Park , Nae In Lee
IPC: H01L25/00 , H01L23/00 , H01L25/065 , H01L21/308 , H01L21/3065 , H01L21/768 , H01L21/67
Abstract: There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.
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公开(公告)号:US10577199B2
公开(公告)日:2020-03-03
申请号:US15665954
申请日:2017-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Tak Lee , Sang Hak Kim , Bo Kyung Kim , Ji Ho Seo , Ho Jin Lee , Sang Hwa Choi
IPC: B65G67/02 , A47L7/00 , A47L9/00 , F25D23/12 , A47L9/04 , F25D11/00 , F25D25/00 , A47L9/28 , A47L5/22
Abstract: Disclosed are a robot cleaner, a refrigerator, a container transfer system, and a method of transferring and retrieving a container using the robot cleaner. The method of transferring a container include returning a robot cleaner to a position guide device installed at a refrigerator, mounting the robot cleaner on the position guide device, transferring, by the refrigerator, a container built in the refrigerator to mount the container on the robot cleaner, and moving the robot cleaner on which the container is mounted to a target position.
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公开(公告)号:US10468400B2
公开(公告)日:2019-11-05
申请号:US15869808
申请日:2018-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Pil Kyu Kang , Seok Ho Kim , Tae Yeong Kim , Kwang Jin Moon , Ho Jin Lee
IPC: H01L25/00 , H01L25/065 , H01L21/768 , H01L21/18 , H01L23/00
Abstract: A method of manufacturing a substrate structure includes providing a first substrate including a first device region on a first surface, providing a second substrate including a second device region on a second surface, such that a width of the first device region is greater than a width of the second device region, and bonding the first substrate and the second substrate, such that the first and second device regions are facing each other and are electrically connected to each other.
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5.
公开(公告)号:US10325897B2
公开(公告)日:2019-06-18
申请号:US15705427
申请日:2017-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ho Jin Lee , Seok Ho Kim , Kwang Jin Moon , Byung Lyul Park , Nae In Lee
IPC: H01L21/768 , H01L23/00 , H01L25/00 , H01L25/065 , H01L21/3065 , H01L21/308 , H01L21/67
Abstract: There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.
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