公开(公告)号：US20230033091A1

公开(公告)日：2023-02-02

申请号：US17951910

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Hoon Park ,  Jung Hwan Um ,  Jin Young Park ,  Ho Yong Park ,  Jin Young Bang ,  Jong Woo Sun ,  Sang Jean Jeon ,  Je Woo Han

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US20190304751A1

公开(公告)日：2019-10-03

申请号：US16118939

申请日：2018-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Hoon Park ,  Jung Hwan Um ,  Jin Young Park ,  Ho Yong Park ,  Jin Young Bang ,  Jong Woo Sun ,  Sang Jean Jeon ,  Je Woo Han

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.