公开(公告)号：US11018046B2

公开(公告)日：2021-05-25

申请号：US16559762

申请日：2019-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11437264B2

公开(公告)日：2022-09-06

申请号：US17182613

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo Sung ,  Jong Woo Sun ,  Je Woo Han ,  Chan Hoon Park ,  Seung Yoon Song ,  Seul Ha Myung

IPC: H01L21/68 ,  H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

公开(公告)号：US10395900B2

公开(公告)日：2019-08-27

申请号：US15415403

申请日：2017-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Young Kim ,  Jung Pyo Hong ,  Jong Woo Sun ,  Doug Yong Sung ,  Yong Ho Lim ,  Yun Kwang Jeon ,  Hwa Jun Jung

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

公开(公告)号：US20190304751A1

公开(公告)日：2019-10-03

申请号：US16118939

申请日：2018-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Hoon Park ,  Jung Hwan Um ,  Jin Young Park ,  Ho Yong Park ,  Jin Young Bang ,  Jong Woo Sun ,  Sang Jean Jeon ,  Je Woo Han

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US20170365444A1

公开(公告)日：2017-12-21

申请号：US15415403

申请日：2017-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Young Kim ,  Jung Pyo Hong ,  Jong Woo Sun ,  Doug Yong Sung ,  Yong Ho Lim ,  Yun Kwang Jeon ,  Hwa Jun Jung

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

公开(公告)号：US20230033091A1

公开(公告)日：2023-02-02

申请号：US17951910

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Hoon Park ,  Jung Hwan Um ,  Jin Young Park ,  Ho Yong Park ,  Jin Young Bang ,  Jong Woo Sun ,  Sang Jean Jeon ,  Je Woo Han

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US11289309B2

公开(公告)日：2022-03-29

申请号：US16407988

申请日：2019-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung Jun Kim ,  Kwang Nam Kim ,  Sung Yeon Kim ,  Jong Woo Sun ,  Sang Rok Oh ,  Jung Pyo Hong

IPC: H01J37/32

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

公开(公告)号：US10903053B2

公开(公告)日：2021-01-26

申请号：US16549408

申请日：2019-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Young Kim ,  Jung Pyo Hong ,  Jong Woo Sun ,  Doug Yong Sung ,  Yong Ho Lim ,  Yun Kwang Jeon ,  Hwa Jun Jung

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

公开(公告)号：US11837496B2

公开(公告)日：2023-12-05

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11791194B2

公开(公告)日：2023-10-17

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.