公开(公告)号：US20210013324A1

公开(公告)日：2021-01-14

申请号：US17038004

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Jin Bum KIM ,  MunHyeon KIM ,  Hyoung Sub KIM ,  Tae Jin PARK ,  Kwan Heum LEE ,  Chang Woo NOH ,  Maria TOLEDANO LU QUE ,  Hong Bae PARK ,  Si Hyung LEE ,  Sung Man WHANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

公开(公告)号：US20190305099A1

公开(公告)日：2019-10-03

申请号：US16178159

申请日：2018-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Seok JO ,  Jae Hyun LEE ,  Jong Han LEE ,  Hong Bae PARK

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the gate insulation support.

公开(公告)号：US20250006789A1

公开(公告)日：2025-01-02

申请号：US18425857

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Kyung SHIN ,  Sang Min CHO ,  Jeong Yong CHOI ,  Dong Woo KANG ,  Hong Bae PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern including a lower pattern extending a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction, the plurality of sheet patterns including an uppermost sheet pattern, a plurality of gate structures disposed to be spaced apart from each other in the first direction on the active pattern and including gate electrodes extending in a third direction and gate spacers on sidewalls of the gate electrodes and a source/drain pattern disposed between the gate structures adjacent to each other and including a semiconductor liner film and a semiconductor filling film on the semiconductor liner film, wherein the semiconductor liner film covers a portion of an upper surface of an uppermost sheet pattern.

公开(公告)号：US20190198639A1

公开(公告)日：2019-06-27

申请号：US16037922

申请日：2018-07-17

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Jin Bum KIM ,  MunHyeon KIM ,  Hyoung Sub KIM ,  Tae Jin PARK ,  Kwan Heum LEE ,  Chang Woo NOH ,  Maria TOLEDANO LU QUE ,  Hong Bae PARK ,  Si Hyung LEE ,  Sung Man WHANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/66545 ,  H01L29/42392 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.