Abstract:
In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.
Abstract:
The defect imaging apparatus including a chamber having a stage to which a substrate having at least one process defect and at least one reference defects defined at a given area is secured, a position controller configured to obtain an imaging error from a detected actual position and a conversion position of the reference defect and correct a conversion position of the process defect by the imaging error, and generate an irradiation position corresponding to an actual position of the process defect, an image signal generator configured to generate an image signal of the process defect by irradiating an electron beam to the irradiation position and detecting charged particles from the irradiation position in response to the irradiated electron beam, and an imaging device configured to generate a defect image of the process defect by processing the generated image signal may be provided.
Abstract:
The defect imaging apparatus including a chamber having a stage to which a substrate having at least one process defect and at least one reference defects defined at a given area is secured, a position controller configured to obtain an imaging error from a detected actual position and a conversion position of the reference defect and correct a conversion position of the process defect by the imaging error, and generate an irradiation position corresponding to an actual position of the process defect, an image signal generator configured to generate an image signal of the process defect by irradiating an electron beam to the irradiation position and detecting charged particles from the irradiation position in response to the irradiated electron beam, and an imaging device configured to generate a defect image of the process defect by processing the generated image signal may be provided.
Abstract:
In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.