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公开(公告)号：US09831626B2
公开(公告)日：2017-11-28
申请号：US14872228
申请日：2015-10-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Yoon Ryu , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun , Seong-Jin Yun
IPC: H01S3/00 , G01N21/88 , G01N21/956
CPC classification number: H01S3/0071 , G01N21/8806 , G01N21/956
Abstract: A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.
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2.发明授权公开(公告)号：US09194816B2
公开(公告)日：2015-11-24
申请号：US14316173
申请日：2014-06-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Ho Rim , Yu-Sin Yang , Sang-Kil Lee , Yong-Deok Jeong , Hyung-Suk Cho
IPC: G01N21/00 , G01N21/956 , G01N21/95 , G01N21/88
CPC classification number: G01N21/956 , G01N21/9501 , G01N2021/8835
Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.
Abstract translation: 在检测衬底的缺陷的方法中，具有第一强度的第一光可以通过第一孔照射到衬底的第一区域。 可以使用来自第一区域的第一反射光检测第一区域中的缺陷。 具有第二强度的第二光可以通过第二孔照射到衬底的第二区域。 可以使用来自第二区域的第二反射光检测第二区域中的缺陷。 因此，可以精确地检测由基板的区域的缺陷。
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公开(公告)号：US09659743B2
公开(公告)日：2017-05-23
申请号：US14963654
申请日：2015-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Hwan Kim , Min-Kook Kim , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC: H01J37/22 , H01J37/21 , H01J37/285 , H01J37/31
CPC classification number: H01J37/222 , H01J37/28 , H01J37/285 , H01J37/31 , H01J2237/226 , H01J2237/2445 , H01J2237/2527 , H01J2237/2561
Abstract: A spatial image having 2D spatial information is obtained from a surface of a sample by an image creating method. The surface of the sample is milled to obtain an elemental image having material information from the milled surface. The spatial image and the elemental image are composed to form a 2D spatial/elemental image.
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公开(公告)号：US20160293379A1
公开(公告)日：2016-10-06
申请号：US15084059
申请日：2016-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-Kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
CPC classification number: H01J37/222 , H01J37/20 , H01J37/28 , H01J2237/20214 , H01J2237/226 , H01J2237/2817
Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
Abstract translation: 检查晶片的方法可以包括：将晶片装载到台上，所述晶片在其上具有多个管芯; 晶片的定位使得晶片上的多个电子束列分别面对晶片上的多个管芯中的每一个的部分区域; 通过使用电子束柱扫描多个管芯中的每一个的各个部分区域; 以及组合通过扫描所述部分区域获得的多个部分图像以提供管芯图像。
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5.发明申请公开(公告)号：US20150070690A1
公开(公告)日：2015-03-12
申请号：US14316173
申请日：2014-06-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Ho Rim , Yu-Sin Yang , Sang-Kil Lee , Yong-Deok Jeong , Hyung-Suk Cho
IPC: G01N21/88
CPC classification number: G01N21/956 , G01N21/9501 , G01N2021/8835
Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.
Abstract translation: 在检测衬底的缺陷的方法中，具有第一强度的第一光可以通过第一孔照射到衬底的第一区域。 可以使用来自第一区域的第一反射光检测第一区域中的缺陷。 具有第二强度的第二光可以通过第二孔照射到衬底的第二区域。 可以使用来自第二区域的第二反射光检测第二区域中的缺陷。 因此，可以精确地检测由基板的区域的缺陷。
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Patent Agency Ranking
公开(公告)号：US09946466B2
公开(公告)日：2018-04-17
申请号：US14738583
申请日：2015-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Kil Lee
CPC classification number: G06F3/061 , G06F3/0656 , G06F3/068 , G06F2212/1016
Abstract: An electronic device may include first and second semiconductor chips. The first semiconductor chip may include a processor and a first memory. The second semiconductor chip may include a second memory. The first memory and second memory may be configured to exchange first data and second data with the processor, respectively. The processor may be configured to exchange target data processed or to be processed with the first and second memories. The processor may be configured to determine the target data as the first data if the number of accesses of the target data is equal to or greater than a first reference value. The processor may be configured to determine the target data as the second data if the number of accesses of the target data is less than the first reference value.
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公开(公告)号：US08841824B2
公开(公告)日：2014-09-23
申请号：US13667203
申请日：2012-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woo-Seok Ko , Yu-Sin Yang , Sue-Jin Cho , Won-Don Joo , Min-Kook Kim , Sang-Kil Lee , Byeong-Hwan Jeon
CPC classification number: H01J65/04
Abstract: A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.
Abstract translation: 用于光学检测检查对象的缺陷的光学检查器的宽带照明器可以包括：无电极室，包括产生宽带光的等离子体区域; 第一能量提供者，在室外，被配置为提供第一能量，用于离子化高压气体以在室中形成离子化气体; 第二能量供应器，室外，被配置为提供第二能量，用于将电离气体转换成等离子体状态，以在室的中心部分形成等离子体区域; 具有第一焦点的椭圆形反射器，室被定位，第二焦点使得宽带光从椭圆形反射器反射到第二焦点; 以及透镜单元，将反射的宽带光聚焦到检查对象上，以形成用于检测检查对象的缺陷的检查光。
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公开(公告)号：US20140224987A1
公开(公告)日：2014-08-14
申请号：US14257048
申请日：2014-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Kook KIM , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chang-Hoon Choi
CPC classification number: H01J37/265 , H01J37/08 , H01J2237/002 , H01J2237/006 , H01J2237/0807
Abstract: Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen received from the liquid nitrogen dewar into second gaseous nitrogen. Related methods are also disclosed.
Abstract translation: 微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台， 检查被放置。 该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上，并且通过将从液氮氮气中接收的液氮蒸发成第二气态氮来冷却氦离子发生器。 还公开了相关方法。
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9.发明授权Method and apparatus to measure step height of device using scanning electron microscope 有权使用扫描电子显微镜测量器件的台阶高度的方法和装置公开(公告)号：US08759763B2
公开(公告)日：2014-06-24
申请号：US13680347
申请日：2012-11-19
Applicant: Samsung Electronics Co., Ltd
Inventor： Young-Hoon Sohn , Jin-Woo Lee , Yong-Deok Jeong , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC: G01B15/00 , G01N23/225 , H01J37/26
CPC classification number: G01B15/00 , G01N23/225 , G06T7/60 , G06T2207/10061 , H01J37/222 , H01J37/26 , H01J37/28 , H01J2237/24578 , H01J2237/2815 , H01J2237/2817
Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.
Abstract translation: 使用扫描电子显微镜（SEM）测量器件的台阶高度的方法可以包括提供包括第一区域和第二区域的器件，其中在第一区域和第二区域之间形成台阶， 通过使用SEM拍摄该装置来获得该装置的SEM图像，其中，SEM图像包括用于第一区域的第一SEM图像区域和用于第二区域的第二SEM图像区域，将SEM图像转换为灰度级直方图 以及计算与第一SEM图像区域相关的第一峰值和与第二SEM图像区域相关的第二峰值，其中通过改变SEM的焦距来重复计算第一峰值和第二峰值，并且确定 通过根据焦距的变化分析第一峰值的变化趋势和根据焦距变化的第二峰值变化的趋势的步骤的高度 th。
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公开(公告)号：US11651201B2
公开(公告)日：2023-05-16
申请号：US16522920
申请日：2019-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan-Kyung Kim , Soon-Young Kim , Jin-Min Kim , Jae-Hong Min , Sang-Kil Lee , Young-Nam Hwang
CPC classification number: G06N3/063 , G06F7/5443 , G06F9/30105 , G11C16/08
Abstract: Provided is a memory device that includes a memory bank including a plurality of memory cells arranged in a region where a plurality of word lines and a plurality of bit lines of the memory device intersect each other, a sense amplifier configured to amplify a signal transmitted through selected bit lines among the plurality of bit lines, and an arithmetic circuit configured to receive a first operand from the sense amplifier, receive a second operand from outside the memory device, and perform an arithmetic operation by using the first operand and the second operand, based on an internal arithmetic control signal generated in the memory device.
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