公开(公告)号：US20190123102A1

公开(公告)日：2019-04-25

申请号：US15967869

申请日：2018-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Ho SONG ,  II Mok PARK ,  Kwang-Woo LEE ,  Se Gab KWON

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01F10/32

Abstract: A non-volatile memory device includes a substrate, a first electrode on the substrate, a second electrode on the substrate, a selection layer between the first electrode and the second electrode, and a memory layer contacting any one of the first electrode and the second electrode. The first electrode has a first width in a first direction. The second electrode is spaced apart from the first electrode in a second direction perpendicular to the first direction. The second electrode has a second width in the first direction. The selection element layer includes a first doped layer that contacts the first electrode. The first doped layer includes an impurity at a first concentration. The selection element layer includes a second doped layer that contacts the second electrode. The second doped layer includes the impurity at a second concentration lower than the first concentration.