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公开(公告)号：US20210384256A1
公开(公告)日：2021-12-09
申请号：US17406166
申请日：2021-08-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Si-Ho SONG , Jeonghee PARK , Changhyun CHO
Abstract: A three-dimensional semiconductor memory device includes first conductive lines extending horizontally in a first direction, a second conductive line extending vertically in a second direction perpendicular to the first direction, and memory cells at cross-points between the first conductive lines and the second conductive line. The first conductive lines are laterally spaced apart from each other in a third direction crossing the first direction. Each of the memory cells includes a variable resistance element and a switching element that are horizontally arranged. The variable resistance element includes a first variable resistance pattern and a second variable resistance pattern arranged in the second direction, a first electrode between the first variable resistance pattern and the first conductive line, a second electrode between the second variable resistance pattern and the second conductive line, and a third electrode between the first variable resistance pattern and the second variable resistance pattern.
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公开(公告)号：US20140376869A1
公开(公告)日：2014-12-25
申请号：US14302943
申请日：2014-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yeong-Seop LEE , Mun-Hyun DO , Dae-Seung MOON , Si-Ho SONG , Dea-Hwan OH , Tae-Hyung LEE
IPC: G02B6/02
CPC classification number: G02B6/03688 , G02B6/023 , G02B6/0283 , G02B6/03611
Abstract: An optical fiber is provided. The optical fiber includes a core located at the center of the optical fiber and having a maximum refractive index in the optical fiber, and a cladding located at a circumference of the core and having a refractive index lower than that of the core. The core has a structure in which sub-core areas having the refractive index higher than those of adjacent sub-core areas and sub-core areas having the refractive index lower than those of adjacent sub-core areas are alternately repeated.
Abstract translation: 提供光纤。 光纤包括位于光纤中心并且在光纤中具有最大折射率的芯，以及位于芯的圆周处并具有比芯的折射率低的折射率的包层。 芯具有这样的结构，其中折射率高于相邻子芯区域的折射率的子核心区域和折射率低于相邻子核心区域的折射率的子核心区域交替重复。
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公开(公告)号：US20190123272A1
公开(公告)日：2019-04-25
申请号：US16014871
申请日：2018-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-Hyun JEONG , ILMOK PARK , Si-Ho SONG
Abstract: Disclosed are a variable resistance memory device and a method of manufacturing the same. The device comprises a first conductive line extending in a first direction, a second conductive line extending in a second direction intersecting the first direction, a memory cell at an intersection between the first conductive line and the second conductive line, a first electrode between the first conductive line and the memory cell, and a second electrode between the second conductive line and the memory cell. The memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line. Resistivity of the first resistivity control pattern is less than resistivity of the second electrode.
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公开(公告)号：US20190123102A1
公开(公告)日：2019-04-25
申请号：US15967869
申请日：2018-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Si-Ho SONG , II Mok PARK , Kwang-Woo LEE , Se Gab KWON
Abstract: A non-volatile memory device includes a substrate, a first electrode on the substrate, a second electrode on the substrate, a selection layer between the first electrode and the second electrode, and a memory layer contacting any one of the first electrode and the second electrode. The first electrode has a first width in a first direction. The second electrode is spaced apart from the first electrode in a second direction perpendicular to the first direction. The second electrode has a second width in the first direction. The selection element layer includes a first doped layer that contacts the first electrode. The first doped layer includes an impurity at a first concentration. The selection element layer includes a second doped layer that contacts the second electrode. The second doped layer includes the impurity at a second concentration lower than the first concentration.
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