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公开(公告)号:US20190123102A1
公开(公告)日:2019-04-25
申请号:US15967869
申请日:2018-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Si-Ho SONG , II Mok PARK , Kwang-Woo LEE , Se Gab KWON
Abstract: A non-volatile memory device includes a substrate, a first electrode on the substrate, a second electrode on the substrate, a selection layer between the first electrode and the second electrode, and a memory layer contacting any one of the first electrode and the second electrode. The first electrode has a first width in a first direction. The second electrode is spaced apart from the first electrode in a second direction perpendicular to the first direction. The second electrode has a second width in the first direction. The selection element layer includes a first doped layer that contacts the first electrode. The first doped layer includes an impurity at a first concentration. The selection element layer includes a second doped layer that contacts the second electrode. The second doped layer includes the impurity at a second concentration lower than the first concentration.