公开(公告)号：US20220326284A1

公开(公告)日：2022-10-13

申请号：US17513549

申请日：2021-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHONG KIM ,  MINSEOK KIM ,  KIHYUN CHOI ,  HEEYOUB KANG ,  JOOYOUNG KIM ,  KWANGKYU BANG

IPC: G01R19/165 ,  G11C5/14 ,  G06F13/16 ,  G06F13/42 ,  G06F3/06 ,  G06F1/28 ,  G01K13/00 ,  G06K9/00 ,  G08B5/38

Abstract: Disclosed is a storage device, which includes a first nonvolatile memory device that stores user data, a second nonvolatile memory device that stores status information for fault analysis, a voltage detect circuit that detects whether an input voltage received at the storage device through a connector exceeds a reference voltage and outputs an over-voltage detect signal when the input voltage exceeds the reference voltage, a status display device that displays a status of the input voltage in response to a blink enable signal, and a storage controller that stores or reads the user data in or from the first nonvolatile memory device, outputs the blink enable signal to the status display device in response to the over-voltage detect signal, and stores the status information in the second nonvolatile memory device.