公开(公告)号：US20250096099A1

公开(公告)日：2025-03-20

申请号：US18751036

申请日：2024-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAESUN KIM ,  HEEYOUB KANG ,  EUNKYEONG PARK ,  YISEUL HAN

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L25/18 ,  H10B80/00

Abstract: A semiconductor package may include a lower redistribution structure having a lower redistribution layer, a lower chip structure on the lower redistribution structure, the lower chip structure including a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a plurality of first posts on a side of the second semiconductor chip and electrically connected to the first semiconductor chip, and a first encapsulant covering the first semiconductor chip, the second semiconductor chip, and the plurality of first posts, a plurality of second posts on a side of the lower chip structure and electrically connected to the lower redistribution layer, a second encapsulant covering the lower chip structure and each of the plurality of second posts, connection vias passing through a portion of the second encapsulant, and electrically connected to the plurality of first posts, and an upper redistribution structure on the second encapsulant.

公开(公告)号：US20220326284A1

公开(公告)日：2022-10-13

申请号：US17513549

申请日：2021-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHONG KIM ,  MINSEOK KIM ,  KIHYUN CHOI ,  HEEYOUB KANG ,  JOOYOUNG KIM ,  KWANGKYU BANG

IPC: G01R19/165 ,  G11C5/14 ,  G06F13/16 ,  G06F13/42 ,  G06F3/06 ,  G06F1/28 ,  G01K13/00 ,  G06K9/00 ,  G08B5/38

Abstract: Disclosed is a storage device, which includes a first nonvolatile memory device that stores user data, a second nonvolatile memory device that stores status information for fault analysis, a voltage detect circuit that detects whether an input voltage received at the storage device through a connector exceeds a reference voltage and outputs an over-voltage detect signal when the input voltage exceeds the reference voltage, a status display device that displays a status of the input voltage in response to a blink enable signal, and a storage controller that stores or reads the user data in or from the first nonvolatile memory device, outputs the blink enable signal to the status display device in response to the over-voltage detect signal, and stores the status information in the second nonvolatile memory device.

公开(公告)号：US20180323175A1

公开(公告)日：2018-11-08

申请号：US16024940

申请日：2018-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ILSOO KIM ,  HEEYOUB KANG ,  YOUNG-ROK OH ,  KITAEK LEE ,  HWI-JONG YOO

IPC: H01L25/065 ,  H01L23/36 ,  H01L23/373

Abstract: A semiconductor module includes a substrate, a first package mounted on the substrate, second packages mounted on the substrate, a label layer provided on the substrate, and a heat transfer structure interposed between the substrate and the label layer and overlapping at least two of the second packages in a plan view of the module.

公开(公告)号：US20200176423A1

公开(公告)日：2020-06-04

申请号：US16783665

申请日：2020-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ILSOO KIM ,  HEEYOUB KANG ,  YOUNG-ROK OH ,  KITAEK LEE ,  HWI-JONG YOO

IPC: H01L25/065 ,  H01L23/36 ,  H01L23/373 ,  H01L23/544 ,  H01L25/10 ,  H05K1/18

Abstract: A semiconductor module includes a substrate, a first package mounted on the substrate, second packages mounted on the substrate, a label layer provided on the substrate, and a heat transfer structure interposed between the substrate and the label layer and overlapping at least two of the second packages in a plan view of the module.

公开(公告)号：US20190079816A1

公开(公告)日：2019-03-14

申请号：US15961918

申请日：2018-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGKYU BANG ,  YOUNG-SEOP SHIM ,  HEEYOUB KANG ,  KYUNGDUK LEE

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/07

CPC classification number: G06F11/006 ,  G06F3/0653 ,  G06F11/073 ,  G06F11/0772 ,  G06F11/0787

Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.

公开(公告)号：US20180138154A1

公开(公告)日：2018-05-17

申请号：US15812482

申请日：2017-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ILSOO KIM ,  HEEYOUB KANG ,  YOUNG-ROK OH ,  KITAEK LEE ,  HWI-JONG YOO

IPC: H01L25/065 ,  H01L23/36

Abstract: A semiconductor module includes a substrate, a first package mounted on the substrate, second packages mounted on the substrate, a label layer provided on the substrate, and a heat transfer structure interposed between the substrate and the label layer and overlapping at least two of the second packages in a plan view of the module.