公开(公告)号：US20230180458A1

公开(公告)日：2023-06-08

申请号：US17933363

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BEOM SEO KIM ,  Bo Ram GU ,  Ja Min KOO ,  Sung Gil KIM ,  Jong Hyeok KIM

IPC: H01L27/108 ,  G11C5/06

CPC classification number: H01L27/10814 ,  G11C5/063

Abstract: A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossing the active area and extending in a first direction on the substrate, and a bit line contact disposed between the substrate and the bit line and directly connected to the first portion of the active area. The bit line contact includes an indent area recessed into the substrate and an upper area on the indent area, a width of the indent area decreases as a distance from the bit line increases, the indent area includes a slope forming a boundary with the substrate and having a straight line shape, and a starting point of the slope of the indent area is lower than an upper surface of the element separation layer.

公开(公告)号：US20240114679A1

公开(公告)日：2024-04-04

申请号：US18538358

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won MA ,  Ja Min KOO ,  Dae Young MOON ,  Kyu Wan KIM ,  Bong Hyun KIM ,  Young Seok KIM

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/37

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US20220037335A1

公开(公告)日：2022-02-03

申请号：US17355451

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won MA ,  Ja Min KOO ,  Dae Young MOON ,  Kyu Wan KIM ,  Bong Hyun KIM ,  Young Seok KIM

IPC: H01L27/108

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.