公开(公告)号：US20240234319A9

公开(公告)日：2024-07-11

申请号：US18323006

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee Woong KIM ,  Jin Kyu KIM ,  Ho Jun KIM ,  Jae Hyun AHN ,  So Ra YOU

IPC: H01L23/528 ,  H01L23/48 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L23/5286 ,  H01L23/481 ,  H01L29/41725 ,  H01L29/78

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

公开(公告)号：US20240136290A1

公开(公告)日：2024-04-25

申请号：US18323006

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee Woong KIM ,  Jin Kyu KIM ,  Ho Jun KIM ,  Jae Hyun AHN ,  So Ra YOU

IPC: H01L23/528 ,  H01L23/48 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L23/5286 ,  H01L23/481 ,  H01L29/41725 ,  H01L29/78

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.