公开(公告)号：US20240234319A9

公开(公告)日：2024-07-11

申请号：US18323006

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee Woong KIM ,  Jin Kyu KIM ,  Ho Jun KIM ,  Jae Hyun AHN ,  So Ra YOU

IPC: H01L23/528 ,  H01L23/48 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L23/5286 ,  H01L23/481 ,  H01L29/41725 ,  H01L29/78

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

公开(公告)号：US20200126858A1

公开(公告)日：2020-04-23

申请号：US16724483

申请日：2019-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Chan GWAK ,  Hwi Chan JUN ,  Heon Jong SHIN ,  So Ra YOU ,  Sang Hyun LEE ,  In Chan HWANG

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/417 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.

公开(公告)号：US20240136290A1

公开(公告)日：2024-04-25

申请号：US18323006

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee Woong KIM ,  Jin Kyu KIM ,  Ho Jun KIM ,  Jae Hyun AHN ,  So Ra YOU

IPC: H01L23/528 ,  H01L23/48 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L23/5286 ,  H01L23/481 ,  H01L29/41725 ,  H01L29/78

Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

公开(公告)号：US20210020509A1

公开(公告)日：2021-01-21

申请号：US17031279

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Chan GWAK ,  Hwi Chan JUN ,  Heon Jong SHIN ,  So Ra YOU ,  Sang Hyun LEE ,  In Chan HWANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.