公开(公告)号：US20170371250A1

公开(公告)日：2017-12-28

申请号：US15481204

申请日：2017-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim KIM ,  Jong-Doo KIM ,  Joong-Won JEON

IPC: G03F7/20 ,  H01L21/8234 ,  G03F1/26 ,  H01L29/66 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F1/26 ,  G03F1/36 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70683 ,  H01L21/823431 ,  H01L22/12 ,  H01L22/30 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7853

Abstract: Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.

公开(公告)号：US20210066283A1

公开(公告)日：2021-03-04

申请号：US16837101

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim KIM ,  Myung Soo NOH ,  No Young CHUNG ,  Seok Yun JEONG ,  Young Han KIM

IPC: H01L27/02 ,  H01L27/092 ,  H01L27/11 ,  G06F30/392

Abstract: A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.

公开(公告)号：US20230041075A1

公开(公告)日：2023-02-09

申请号：US17671021

申请日：2022-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim KIM ,  Jae Myoung LEE ,  Sung Gon JUNG

IPC: G03F1/36

Abstract: An optical proximity correction method includes designing a mask design. The designing of the mask design includes setting a reference point of the mask design, calculating a plurality of chief ray angles of a plurality of points of interest on the mask design, respectively, each of the plurality of points of interest having a corresponding distance from the reference point, finding, among the plurality of points of interest, a first point of interest having a maximum chief ray angle among the plurality of chief ray angles, a distance of the first point of interest from the reference point being set as a deteriorated distance, and compensating for distortion of an image to be transferred from a pattern located at the deteriorated distance from the reference point of the mask design.

公开(公告)号：US20230109875A1

公开(公告)日：2023-04-13

申请号：US18080832

申请日：2022-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim KIM ,  Myung Soo NOH ,  No Young CHUNG ,  Seok Yun JEONG ,  Young Han KIM

IPC: H01L27/02 ,  H01L27/092 ,  G06F30/392

Abstract: A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.