公开(公告)号：US20170069533A1

公开(公告)日：2017-03-09

申请号：US15236427

申请日：2016-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Doo KIM ,  Joong-Won JEON ,  Young-Deok KWON ,  Suk-Joo LEE

IPC: H01L21/768 ,  H01L21/8234 ,  H01L27/02

CPC classification number: H01L21/823475 ,  H01L21/76804 ,  H01L21/76816 ,  H01L23/522 ,  H01L23/528 ,  H01L27/0207

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming an interlayer insulating layer that comprises a first region and a second region, forming an etch stop pattern for exposing the second region in the first region of the interlayer insulating layer and forming a mask pattern that comprises a first via-hole that exposes an upper surface of the etch stop pattern and a second via-hole that penetrates the interlayer insulating layer on the interlayer insulating layer and the etch stop pattern.

Abstract translation: 提供一种制造半导体器件的方法。 制造半导体器件的方法包括形成包括第一区域和第二区域的层间绝缘层，形成用于暴露层间绝缘层的第一区域中的第二区域的蚀刻停止图案，并形成掩模图案，掩模图案包括 暴露蚀刻停止图案的上表面的第一通孔和穿过层间绝缘层和蚀刻停止图案上的层间绝缘层的第二通孔。

公开(公告)号：US20170371250A1

公开(公告)日：2017-12-28

申请号：US15481204

申请日：2017-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Lim KIM ,  Jong-Doo KIM ,  Joong-Won JEON

IPC: G03F7/20 ,  H01L21/8234 ,  G03F1/26 ,  H01L29/66 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F1/26 ,  G03F1/36 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70683 ,  H01L21/823431 ,  H01L22/12 ,  H01L22/30 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7853

Abstract: Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.

公开(公告)号：US20160018727A1

公开(公告)日：2016-01-21

申请号：US14642660

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Doo KIM ,  Se-Jin PARK ,  Suk-Joo LEE

IPC: G03F1/26 ,  H01L21/308

CPC classification number: G03F1/26 ,  G03F1/28 ,  G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  H01L21/3086

Abstract: A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.

Abstract translation: 提供了用于光刻的掩模和制造掩模和半导体器件的方法。 制造掩模的方法可以包括提供衬底，在衬底上形成相移材料层，在相移材料层上形成光阻挡层，以及通过对相位进行图案化来在衬底上形成主图案和子图案 移位材料层和遮光层。 可以在保留在子图案上的遮光层上留下的主图案上去除遮光层。 可以使用掩模制造半导体器件，以在半导体晶片上形成光致抗蚀剂图案。 光致抗蚀剂的图案可以用于蚀刻半导体晶片的物体层。