公开(公告)号：US20250043046A1

公开(公告)日：2025-02-06

申请号：US18405175

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Jeongho MUN ,  Seonghyeon AHN ,  Chanjae AHN ,  Jaejun LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Sungwon CHOI

IPC: C08F120/28 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50° C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition: wherein, in Formula 1, descriptions of L11 to L13, a11 to a13, An, R11, R12, b12, and p1 are provided in the present specification.

公开(公告)号：US20210013110A1

公开(公告)日：2021-01-14

申请号：US16793097

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongho MUN ,  Naery Yu ,  Sumin Kim ,  Songse Yi

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/3213

Abstract: A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.