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    ELECTRONIC APPARATUS AND CONTROL METHOD THEREROF
    1.
    发明公开
    ELECTRONIC APPARATUS AND CONTROL METHOD THEREROF 审中-公开

    公开(公告)号：US20240272995A1

    公开(公告)日：2024-08-15

    申请号：US18397764

    申请日：2023-12-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangeun LEE ,  Sumin Kim ,  Dongjun Lee

    IPC: G06F11/20 ,  G06F13/40

    CPC classification number: G06F11/2002 ,  G06F13/4022 ,  G06F2201/85 ,  H04N21/431 ,  H04N21/43635 ,  H04N21/4622 ,  H04N21/485

    Abstract: An electronic apparatus includes a display; an input interface including a first high-speed multimedia interface (HDMI) port configured to connect to a first source device, and a second HDMI port configured to connect to a second source device; and at least one processor operatively connected with the display and the input interface, wherein a first switching device is provided in a first consumer electronic control (CEC) line corresponding to the first HDMI port, and a second switching device is provided in a second CEC line corresponding to the second HDMI port, and wherein the at least one processor is configured to: control, based on a malfunction associated with a CEC function being identified from the first source device or the second source device, the display to display a user interface (UI) for turning off the CEC function, and turn off the CEC function by separately controlling at least one of the first switching device or the second switching device based on a user command received through the UI.

    Method of manufacturing a semiconductor device including a plurality of channel patterns
    4.
    发明授权
    Method of manufacturing a semiconductor device including a plurality of channel patterns 有权

    公开(公告)号：US11069580B2

    公开(公告)日：2021-07-20

    申请号：US16793097

    申请日：2020-02-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeongho Mun ,  Naery Yu ,  Sumin Kim ,  Songse Yi

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/3213

    Abstract: A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.

    Display screen or portion thereof with transitional graphical user interface
    6.
    外观设计
    Display screen or portion thereof with transitional graphical user interface 有权

    公开(公告)号：USD993966S1

    公开(公告)日：2023-08-01

    申请号：US29761462

    申请日：2020-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Designer： Sumin Kim ,  Kyerim Lee ,  Eunjin Lee

    Abstract: FIG. 1 is a front view of the first image in a sequence for a display screen or portion thereof with transitional graphical user interface showing our new design according to a first embodiment;
    FIG. 2 is the second image thereof;
    FIG. 3 is another front view of the first image thereof, showing only the claimed features, separately for clarity of illustration;
    FIG. 4 is another front view of the second image thereof, showing only the claimed features, separately for clarity of illustration;
    FIG. 5 is a front view of the first image in a sequence for a display screen or portion thereof with transitional graphical user interface showing our new design according to a second embodiment;
    FIG. 6 is the second image thereof;
    FIG. 7 is another front view of the first image thereof, showing only the claimed features, separately for clarity of illustration; and,
    FIG. 8 is another front view of the second image thereof, showing only the claimed features, separately for clarity of illustration.
    The thicker dashed lines shown in FIGS. 2, 4, 6, and 8 form part of the claimed design. The outer perimeter shown in broken lines in the figures illustrates a display screen or portion thereof and forms no part of the claimed design. The remaining broken lines in the figures illustrate portions of the graphical user interface that form no part of the claimed design.
    The appearance of the transitional image sequentially transitions between the images shown in FIGS. 1-2 and 5-6, respectively. The process or period in which one image transitions to another image forms no part of the claimed design.

    MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND OPERATING METHOD OF THE MEMORY DEVICE
    8.
    发明申请
    MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND OPERATING METHOD OF THE MEMORY DEVICE 有权

    公开(公告)号：US20240402941A1

    公开(公告)日：2024-12-05

    申请号：US18644558

    申请日：2024-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaehun Jang ,  Sumin Kim ,  Jiwon Seo ,  Mankeun Seo ,  Hongrak Son ,  Dongmin Shin

    IPC: G06F3/06

    Abstract: A memory device includes first and second memory cell arrays each including a plurality of memory cells, a page buffer circuit configured to read first soft decision data including a plurality of sub-segments from the first memory cell array, and a compression circuit configured to perform a first compression operation of generating a first compression segment including a number of position values less than or equal to a first reference number, on each of a plurality of partial segments included in one of the plurality of sub-segments and sequentially perform a plurality of compression operations, which is subsequent to the first compression operation, of generating a next compression segment including a number of position values, which are less than or equal to a reference number corresponding to each compression operation, of position values included in two or more previous compression segments in each compression operation.

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