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公开(公告)号：US20210343552A1
公开(公告)日：2021-11-04
申请号：US17376369
申请日：2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20200083063A1
公开(公告)日：2020-03-12
申请号：US16371461
申请日：2019-04-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20150050793A1
公开(公告)日：2015-02-19
申请号：US14286108
申请日：2014-05-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Jine PARK , Bo-Un YOON , Young-Sang YOUN , Jeong-Nam HAN , Kee-Sang KWON , Doo-Sung YUN , Byung-Kwon CHO , Ji-Hoon CHA
IPC: H01L29/66
CPC classification number: H01L29/66477 , H01L21/02063 , H01L21/31116 , H01L21/76804 , H01L21/76814 , H01L21/76826 , H01L21/76897 , H01L29/41791 , H01L29/66553 , H01L29/66795 , H01L2221/1063
Abstract: A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.
Abstract translation: 一种用于形成沟槽的方法包括蚀刻氧化物层以在其中形成沟槽，沿着沟槽的表面共形形成第一反应层，第一反应层包括沟槽上部的第一区域和第二区域 沟槽的下部，通过使第一量的蚀刻气体与第一反应层的第一区域反应形成阻挡层，并且通过使第二量的蚀刻气体反应来蚀刻第二区域的下部的氧化物层 与第一反应层的第二区域相比，第二量的蚀刻气体大于第一量的蚀刻气体。
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公开(公告)号：US20140080296A1
公开(公告)日：2014-03-20
申请号：US13944087
申请日：2013-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-Jik BAEK , Ji-Hoon CHA , Bo-Un YOON , Kwang-Wook LEE , Jeong-Nam HAN
IPC: H01L21/306
CPC classification number: H01L21/30604 , H01L21/30608 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L29/66628 , H01L29/7833 , H01L29/7848
Abstract: A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group (—OH) and a second chemical substance capable of oxidizing the substrate. The concentration of the second chemical substance is 1.5 times or less the concentration of the first chemical substance.
Abstract translation: 制造半导体器件的方法包括在衬底上形成栅极图案，并且使用第一湿蚀刻工艺蚀刻栅极图案的侧面以形成第一凹部。 第一湿蚀刻工艺包括使用含有包含羟基官能团（-OH）的第一化学物质和能够氧化底物的第二化学物质的蚀刻剂。 第二化学物质的浓度为第一化学物质浓度的1.5倍以下。
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