公开(公告)号：US20160172193A1

公开(公告)日：2016-06-16

申请号：US15052250

申请日：2016-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jun PARK ,  Jung-inn SOHN ,  Seung-nam CHA ,  Ji-yeon KU

IPC: H01L21/02

CPC classification number: H01L21/02609 ,  B82Y10/00 ,  H01B1/08 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/22

Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Abstract translation: 通过使用热化学气相沉积方法控制具有纤锌矿晶体结构的金属氧化物半导体的生长晶体面的方法包括通过使用源极使金属氧化物半导体在非极性方向上生长来控制生长晶面 包括降低金属氧化物半导体的极性面的表面能的热分解材料的材料。

公开(公告)号：US20150065196A1

公开(公告)日：2015-03-05

申请号：US14147921

申请日：2014-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-yeon KU ,  Sang-hyun LEE ,  Sung-woo HWANG

IPC: H04M1/02

CPC classification number: H04M1/0254 ,  H04M1/72575

Abstract: A method of performing a function by combining one or more blocks including sensing whether the one or more blocks are connected, determining indexes respectively corresponding to the connected one or more blocks, deciding, by using the indexes, a function to be performed based on the sensing, the function being one of a plurality of functions, each function associated with a respective set of function blocks, and generating a control signal for performing the decided function may be provided.

Abstract translation: 一种通过组合一个或多个块来执行功能的方法，包括检测所述一个或多个块是否被连接，确定分别对应于所连接的一个或多个块的索引，通过使用所述索引来确定将基于所述一个或多个块执行的功能 可以提供作为多个功能之一的功能，与相应功能块组相关联的功能，以及产生用于执行决定的功能的控制信号。

公开(公告)号：US20140138672A1

公开(公告)日：2014-05-22

申请号：US13859250

申请日：2013-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jun PARK ,  Jung-inn SOHN ,  Seung-nam CHA ,  Ji-yeon KU

IPC: H01L21/02 ,  H01L29/22

CPC classification number: H01L21/02609 ,  B82Y10/00 ,  H01B1/08 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/22

Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Abstract translation: 通过使用热化学气相沉积方法控制具有纤锌矿晶体结构的金属氧化物半导体的生长晶体面的方法包括通过使用源极使金属氧化物半导体在非极性方向上生长来控制生长晶面 包括降低金属氧化物半导体的极性面的表面能的热分解材料的材料。