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    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150137261A1

    公开(公告)日：2015-05-21

    申请号：US14602716

    申请日：2015-01-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-Wook LEE ,  Myeong-Cheol KIM ,  Sang-Min LEE ,  Young-Ju PARK ,  Hyung-Yong KIM ,  Myung-Hoon JUNG

    IPC: H01L29/78 ,  H01L27/11

    CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L29/66636 ,  H01L29/78

    Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

    Abstract translation: 半导体器件的制造方法包括提供具有第一区域和第二区域的衬底，在衬底的第一区域中形成多个第一栅极，使得第一栅极以第一间距相互间隔开， 在所述衬底的所述第二区域中形成多个第二栅极，使得所述第二栅极以不同于所述第一间距的第二间距彼此间隔开，将蚀刻速率调节掺杂剂注入所述第二区域以形成注入区域， 同时阻挡第一区域，通过蚀刻多个第一栅极之间的第一区域形成第一沟槽，并且通过蚀刻多个第二栅极之间的第二区域形成第二沟槽。

    OPERATION METHOD AND SYSTEM OF MOBILE TERMINAL
    8.
    发明申请
    OPERATION METHOD AND SYSTEM OF MOBILE TERMINAL 审中-公开
    移动终端的操作方法和系统

    公开(公告)号：US20160234370A1

    公开(公告)日：2016-08-11

    申请号：US15132877

    申请日：2016-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hun LIM ,  Gene-Moo LEE ,  Jin-Wook LEE ,  Je-Hyok RYU ,  Woo-Jin PARK ,  Jin-Hyoung KIM ,  Shin-Il KANG

    IPC: H04M1/725 ,  H04M1/2745

    CPC classification number: H04M1/72527 ,  H04M1/274516 ,  H04M1/7253 ,  H04M1/72552 ,  H04W88/02

    Abstract: An operation method and mobile terminal connected to an electronic device. The operation method includes extracting a piece of content displayed on a portion of a display of the electronic device, corresponding to a user selection, from among multiple pieces of content displayed on the display; displaying a function of the mobile terminal corresponding to the extracted piece of content; and delivering, to the mobile terminal, the extracted piece of content and a command of the function of the mobile terminal that will execute the extracted piece of content.

    Abstract translation: 连接到电子设备的操作方法和移动终端。 操作方法包括从显示在显示器上的多个内容中提取与用户选择相对应的显示在电子设备的显示部分上的一段内容; 显示与提取的内容相对应的移动终端的功能; 以及向所述移动终端提供所述提取的内容片段以及将执行所述提取的内容的所述移动终端的功能的命令。

    FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD
    10.
    发明申请
    FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD 有权
    使用相同方法制作的半导体器件和半导体器件的制造方法

    公开(公告)号：US20140110757A1

    公开(公告)日：2014-04-24

    申请号：US14138721

    申请日：2013-12-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-Wook LEE ,  Myeong-Cheol KIM ,  Sang-Min LEE ,  Young-Ju PARK ,  Hyung-Yong KIM ,  Myung-Hoon JUNG

    IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265

    CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L29/66636 ,  H01L29/78

    Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

    Abstract translation: 半导体器件的制造方法包括提供具有第一区域和第二区域的衬底，在衬底的第一区域中形成多个第一栅极，使得第一栅极以第一间距相互间隔开， 在所述衬底的所述第二区域中形成多个第二栅极，使得所述第二栅极以不同于所述第一间距的第二间距彼此间隔开，将蚀刻速率调节掺杂剂注入所述第二区域以形成注入区域， 同时阻挡第一区域，通过蚀刻多个第一栅极之间的第一区域形成第一沟槽，并且通过蚀刻多个第二栅极之间的第二区域形成第二沟槽。

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