公开(公告)号：US20240258443A1

公开(公告)日：2024-08-01

申请号：US18630449

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L31/02327 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20190013357A1

公开(公告)日：2019-01-10

申请号：US16018333

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk KIM ,  Jeong Hee PARK ,  Seong Geon PARK ,  Soon Oh PARK ,  Jung Moo LEE

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

公开(公告)号：US20220384666A1

公开(公告)日：2022-12-01

申请号：US17671697

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.