公开(公告)号：US20220285511A1

公开(公告)日：2022-09-08

申请号：US17455681

申请日：2021-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghee Park ,  Munhyeon Kim ,  Uihui Kwon ,  Joohyung You ,  Daewon Ha

IPC: H01L29/423 ,  H01L29/786 ,  H01L27/088 ,  H01L29/417

Abstract: A semiconductor device includes active regions extending on a substrate in a first direction, gate structures intersecting the active regions and extending on the substrate in a second direction, source/drain regions in recess regions in which the active regions are recessed, on both sides of each of the gate structures, and contact plugs connected to the source/drain regions, wherein each of the source/drain regions include first and second epitaxial layers sequentially stacked on the active regions in the recess regions in a third direction perpendicular to an upper surface of the substrate, respectively, and wherein ratios of the first epitaxial layer thickness in the third direction to the second epitaxial layer thickness in the third direction are different in different ones of the source/drain regions.

公开(公告)号：US20240320402A1

公开(公告)日：2024-09-26

申请号：US18544065

申请日：2023-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjune Bae ,  Taeyoon An ,  Joohyung You ,  In Huh ,  Moonhyun Cha ,  Jaemyung Choe

IPC: G06F30/27

CPC classification number: G06F30/27

Abstract: Provided are a method, a device, and a system for estimating threshold values of a kernel density function with respect to defects of a product. The method includes a bootstrapping sampling operation, estimating optimal kernel bandwidths for sample data sets by using a bandwidth estimation method selected according to a number of sample data from among a plurality of bandwidth estimation methods, estimating threshold values corresponding to a tail region of the kernel density function based on the optimal kernel bandwidths, and providing a quantitative value for quantifying uncertainty of the threshold values based on the plurality of threshold values.

公开(公告)号：US20250098224A1

公开(公告)日：2025-03-20

申请号：US18967518

申请日：2024-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghee Park ,  Munhyeon Kim ,  Uihui Kwon ,  Joohyung You ,  Daewon Ha

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/417 ,  H01L29/786

Abstract: A semiconductor device includes active regions extending on a substrate in a first direction, gate structures intersecting the active regions and extending on the substrate in a second direction, source/drain regions in recess regions in which the active regions are recessed, on both sides of each of the gate structures, and contact plugs connected to the source/drain regions, wherein each of the source/drain regions include first and second epitaxial layers sequentially stacked on the active regions in the recess regions in a third direction perpendicular to an upper surface of the substrate, respectively, and wherein ratios of the first epitaxial layer thickness in the third direction to the second epitaxial layer thickness in the third direction are different in different ones of the source/drain regions.

公开(公告)号：US12191368B2

公开(公告)日：2025-01-07

申请号：US17455681

申请日：2021-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghee Park ,  Munhyeon Kim ,  Uihui Kwon ,  Joohyung You ,  Daewon Ha

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/417 ,  H01L29/786

Abstract: A semiconductor device includes active regions extending on a substrate in a first direction, gate structures intersecting the active regions and extending on the substrate in a second direction, source/drain regions in recess regions in which the active regions are recessed, on both sides of each of the gate structures, and contact plugs connected to the source/drain regions, wherein each of the source/drain regions include first and second epitaxial layers sequentially stacked on the active regions in the recess regions in a third direction perpendicular to an upper surface of the substrate, respectively, and wherein ratios of the first epitaxial layer thickness in the third direction to the second epitaxial layer thickness in the third direction are different in different ones of the source/drain regions.