公开(公告)号：US20180175143A1

公开(公告)日：2018-06-21

申请号：US15833031

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-sic YOON ,  Ki-seok Lee ,  Ki-wook Jung ,  Dong-oh Kim ,  Ho-in Lee ,  Je-min Park ,  Seok-han Park ,  Augustin Hong ,  Ju-yeon Jang ,  Hyeon-ok Jung ,  Yu-jin Seo

IPC: H01L29/06 ,  H01L27/092 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/0206 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/823878 ,  H01L27/092 ,  H01L29/4236

Abstract: A semiconductor device including a substrate with a first trench, a first insulation liner on inner flanks of the first trench, and a second insulation liner on inner flanks of a first sub trench, the first insulation trench defined by the first insulation liner in the first trench, a top level of the second insulation liner that adjoins the inner flanks of the first sub trench in a direction perpendicular to a top surface of the substrate being different from the top surface of the substrate outside the first trench, may be provided.