公开(公告)号：US20240292597A1

公开(公告)日：2024-08-29

申请号：US18528621

申请日：2023-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan HUH ,  Daehyun KIM ,  Yeajin NA ,  Junsik YU ,  Taekyung YOON ,  Yoojin JEONG ,  Yongjun CHOI

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/485 ,  H10B12/482

Abstract: Described is a semiconductor device comprising an active pattern, an additional active layer on the active pattern, and a gate structure that runs across the active pattern. The additional active layer includes a bottom surface connected to a sidewall of the active pattern and an upper curved surface at a level higher than a level of the bottom surface. A lattice contact of the additional active layer is different from that of the active pattern.

公开(公告)号：US20240213342A1

公开(公告)日：2024-06-27

申请号：US18599522

申请日：2024-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

IPC: H01L29/423 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/82345 ,  H01L29/42364 ,  H01L29/4916 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7827

Abstract: A semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. A center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film.

公开(公告)号：US20210242320A1

公开(公告)日：2021-08-05

申请号：US17222474

申请日：2021-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/49

Abstract: A semiconductor device includes a substrate including an active region, a gate trench disposed in the substrate and crossing the active region; a gate dielectric layer disposed in the gate trench; a first gate electrode disposed on the gate dielectric layer and including center and edge portions; a second gate electrode disposed on the first gate electrode; a gate capping insulating layer disposed on the second gate electrode and filling the gate trench; and first and second impurity regions disposed in the substrate opposite to each other with respect to the gate trench. A top surface of each of the center and edge portions contacts a bottom surface of the second gate electrode. The top surface of the second gate electrode is concave. The bottom surface of the gate capping insulating layer is convex, and a side surface of the gate capping insulating layer contacts the gate dielectric layer.

公开(公告)号：US20230006046A1

公开(公告)日：2023-01-05

申请号：US17941828

申请日：2022-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan HUH ,  Dongchan Kim ,  Dae Hyun Kim ,  Euiju Kim ,  Jisoo Lee

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/49

Abstract: A semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. A center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film.

公开(公告)号：US20200152753A1

公开(公告)日：2020-05-14

申请号：US16523529

申请日：2019-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate trench crossing an active region, and a gate structure in the gate trench. The gate structure includes a gate dielectric layer disposed on an inner wall of the gate trench, a gate electrode disposed on the gate electric layer and partially filling the gate trench, a gate capping insulating layer disposed on the gate electrode, and a gap-fill insulating layer disposed in the gate trench and disposed on the gate capping insulating layer. The gate capping insulating layer includes a material formed by oxidizing a portion of the gate electrode, nitriding the portion of the gate electrode, or oxidizing and nitriding the portion of the gate electrode.