SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20190035750A1

    公开(公告)日:2019-01-31

    申请号:US15997338

    申请日:2018-06-04

    Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a lower dielectric layer on the semiconductor substrate, a chip pad on the lower dielectric layer of the chip region, an upper dielectric layer on the lower dielectric layer, which includes a first opening exposing the chip pad on the chip region and a second opening exposing the lower dielectric layer on the edge region, and a redistribution pad connected to the chip pad. The redistribution pad includes a via portion in the first opening and a pad portion extending from the via portion onto the upper dielectric layer.

    METHOD AND APPARATUS WITH OBJECT MOTION TRANSFER

    公开(公告)号:US20230252707A1

    公开(公告)日:2023-08-10

    申请号:US17980817

    申请日:2022-11-04

    CPC classification number: G06T13/40

    Abstract: An apparatus that transfers object motion in a source space to a target space is provided. The apparatus defines a mapping function from the source space to the target space based on feature points of the object-positioned source space, and feature points of the object-represented target space; determines a target root position corresponding to a root position of the object based on the mapping function; determines a target direction corresponding to a direction of the object, based on the mapping function; determines a target main joint corresponding to a main joint of the object based on the mapping function; determines a target sub-joint excluding the target main joint in the target space based on unique joint information of the object; and generates data representing the object motion in the target space by modifying a pose of the object in the target space to match the target main joint.

    SEMICONDUCTOR DEVICES INCLUDING SCRIBE LANE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICES

    公开(公告)号:US20210175133A1

    公开(公告)日:2021-06-10

    申请号:US16898943

    申请日:2020-06-11

    Abstract: A semiconductor device includes a substrate including a first part and a second part, a memory cell disposed on the first part, an insulation layer disposed on the first part and the second part, the insulation layer covering the memory cell, a portion of the insulation layer on the second part including a stepped sidewall, and a first pattern group disposed on the second part and in the portion of the insulation layer and the substrate. A first sidewall of the semiconductor device corresponds to the stepped sidewall including an upper sidewall, a lower sidewall and a connecting surface connecting the upper sidewall to the lower sidewall. The lower sidewall disposed under the upper sidewall is closer to the substrate than the upper sidewall, and has surface roughness different from surface roughness of the upper sidewall.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20200058543A1

    公开(公告)日:2020-02-20

    申请号:US16420328

    申请日:2019-05-23

    Abstract: A semiconductor device including a semiconductor substrate including a chip region and an edge region around the chip region; a lower dielectric layer and an upper dielectric layer on the semiconductor substrate; a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected a chip pad; a process monitoring structure on the edge region; and dummy elements in the edge region and having an upper surface lower than an upper surface of the upper dielectric layer.

    SEMICONDUCTOR DEVICES INCLUDING SCRIBE LANE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICES

    公开(公告)号:US20220223485A1

    公开(公告)日:2022-07-14

    申请号:US17706401

    申请日:2022-03-28

    Abstract: A semiconductor device includes a substrate including a first part and a second part, a memory cell disposed on the first part, an insulation layer disposed on the first part and the second part, the insulation layer covering the memory cell, a portion of the insulation layer on the second part including a stepped sidewall, and a first pattern group disposed on the second part and in the portion of the insulation layer and the substrate. A first sidewall of the semiconductor device corresponds to the stepped sidewall including an upper sidewall, a lower sidewall and a connecting surface connecting the upper sidewall to the lower sidewall. The lower sidewall disposed under the upper sidewall is closer to the substrate than the upper sidewall, and has surface roughness different from surface roughness of the upper sidewall.

    SEMICONDUCTOR DEVICE
    7.
    发明申请

    公开(公告)号:US20220005730A1

    公开(公告)日:2022-01-06

    申请号:US17482796

    申请日:2021-09-23

    Abstract: A semiconductor device including a semiconductor substrate including a chip region and an edge region around the chip region; a lower dielectric layer and an upper dielectric layer on the semiconductor substrate; a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected a chip pad; a process monitoring structure on the edge region; and dummy elements in the edge region and having an upper surface lower than an upper surface of the upper dielectric layer.

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