公开(公告)号：US11211450B2

公开(公告)日：2021-12-28

申请号：US16033488

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun Park ,  Kye-hyun Baek ,  Yong-ho Jeon ,  Cheol Kim ,  Sung-il Park ,  Yun-il Lee ,  Hyung-suk Lee

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

公开(公告)号：US12218193B2

公开(公告)日：2025-02-04

申请号：US17528251

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun Park ,  Kye-hyun Baek ,  Yong-ho Jeon ,  Cheol Kim ,  Sung-il Park ,  Yun-il Lee ,  Hyung-suk Lee

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

公开(公告)号：US20190280087A1

公开(公告)日：2019-09-12

申请号：US16033488

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun Park ,  Kye-hyun Baek ,  Yong-ho Jeon ,  Cheol Kim ,  Sung-il Park ,  Yun-il Lee ,  Hyung-suk Lee

IPC: H01L29/06 ,  H01L27/088

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

公开(公告)号：US20170047200A1

公开(公告)日：2017-02-16

申请号：US15097365

申请日：2016-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Joo Lee ,  Kye-hyun Baek ,  Masayuki Tomoyasu ,  Jong-seo Hong ,  Jin-pyoung Kim

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/32642 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.

Abstract translation: 等离子体处理装置包括限定处理空间的室，安装在室中的上电极，上电极包括位于上电极的中心区域的第一气体喷射口和位于上电极的周边区域中的第二气体喷射口 所述上电极，位于与所述处理空间相对的上电极的下电极，配置成经由所述第一气体喷射口和所述第二气体喷射口将第一处理气体供给到所述处理空间中的第一气体供给单元， 被配置为经由第二气体喷射口将第二处理气体供应到处理空间的单元，配置成感测处理空间的边缘部分中的等离子体的状态的传感器，以及响应于控制第二气体供应单元的控制器 到传感器的输出信号。