公开(公告)号：US09892500B2

公开(公告)日：2018-02-13

申请号：US14710872

申请日：2015-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Joo Lee ,  Won-Joo Park ,  Seuk-Hwan Choi ,  Byung-Gook Kim ,  Dong-Hoon Chung

IPC: G06F19/00 ,  G05B13/02 ,  G06T7/00

CPC classification number: G06T7/0004 ,  G05B2219/45027 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

公开(公告)号：US20170047200A1

公开(公告)日：2017-02-16

申请号：US15097365

申请日：2016-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Joo Lee ,  Kye-hyun Baek ,  Masayuki Tomoyasu ,  Jong-seo Hong ,  Jin-pyoung Kim

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/32642 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.

Abstract translation: 等离子体处理装置包括限定处理空间的室，安装在室中的上电极，上电极包括位于上电极的中心区域的第一气体喷射口和位于上电极的周边区域中的第二气体喷射口 所述上电极，位于与所述处理空间相对的上电极的下电极，配置成经由所述第一气体喷射口和所述第二气体喷射口将第一处理气体供给到所述处理空间中的第一气体供给单元， 被配置为经由第二气体喷射口将第二处理气体供应到处理空间的单元，配置成感测处理空间的边缘部分中的等离子体的状态的传感器，以及响应于控制第二气体供应单元的控制器 到传感器的输出信号。

公开(公告)号：US10753800B2

公开(公告)日：2020-08-25

申请号：US16238644

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Il Mun ,  Hyung-Joo Lee ,  Jong-Woo Sun ,  Ja-Myung Gu ,  Jae-Woong Hwang ,  Jong-Hwan An

IPC: G01J3/30 ,  G01J3/443 ,  G01N21/73 ,  G01J3/02

Abstract: A calibrator of an OES may include a cover, a reference light source and a controller. The cover may be detachably combined with a ceiling of a plasma chamber of a plasma processing apparatus. The reference light source may be installed at the cover to irradiate a reference light to the OES through an inner space of the plasma chamber. The controller may compare a spectrum of the reference light inputted into the OES with a spectrum of an actual light inputted into the OES during a plasma process in the plasma chamber to calibrate the OES. Thus, the OES may be calibrated without disassembling of the OES from the plasma chamber to decrease a time for calibrating the OES.

公开(公告)号：US10825666B2

公开(公告)日：2020-11-03

申请号：US16395532

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeong-Hun Kim ,  Jeong-Il Mun ,  Hyung-Joo Lee ,  Jong-Woo Sun ,  Dong-Kyu Kim

IPC: H01J37/32 ,  G01J3/02 ,  G01J3/443 ,  G01N21/68 ,  G01N21/73

Abstract: Provided is a plasma monitoring apparatus including an objective lens configured to collect light that is emitted from plasma and passes through an optical window of a chamber, a beam splitter configured to divide the light collected by the objective lens into first light and second light, a first optical system and a second optical system that are provided on a first optical path of the first light and a second optical path of the second light, respectively, the first optical system and the second optical system having different focal lengths such that focal points of the first optical system and the second optical system are set at different regions in the plasma, and a light detector configured to detect the first light that has passed through the first optical system and the second light that has passed through the second optical system.