公开(公告)号：US20130256621A1

公开(公告)日：2013-10-03

申请号：US13735180

申请日：2013-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-Hwan Park ,  Gyu-Hwan Oh ,  Jeong-Min Park ,  Kyung-Min Chung

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A phase-change memory device includes a diode, a plug, a doping layer pattern, a phase-change layer pattern and an upper electrode. The diode is disposed on a substrate. The plug is disposed on the diode and has a bottom surface whose area is equal to the area of a top surface of the diode. The plug is formed of metal or a conductive metallic compound. The doping layer pattern is disposed on the plug and has a bottom surface whose area is equal to the area of a top surface of the plug, and includes the same metal or conductive metallic compound as the plug. The phase-change layer pattern is disposed on the doping layer pattern. The upper electrode is disposed on the phase-change layer pattern.

Abstract translation: 相变存储器件包括二极管，插头，掺杂层图案，相变层图案和上电极。 二极管设置在基板上。 插头设置在二极管上，并具有面积等于二极管顶表面面积的底面。 插头由金属或导电金属化合物形成。 掺杂层图案设置在插塞上，并且具有面积等于插头顶面的面积的底面，并且包括与插头相同的金属或导电金属化合物。 相变层图案设置在掺杂层图案上。 上电极配置在相变层图案上。

公开(公告)号：US09812450B2

公开(公告)日：2017-11-07

申请号：US15006265

申请日：2016-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min Baek ,  Sang-Hoon Ahn ,  Woo-Kyung You ,  Byung-Hee Kim ,  Young-Ju Park ,  Nae-in Lee ,  Kyung-Min Chung

IPC: H01L23/522 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475

Abstract: A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wiring structures includes a metal pattern and a barrier pattern covering a sidewall, a bottom surface, and an edge portion of a top surface of the metal pattern and not covering a central portion of the top surface of the metal pattern. The insulating interlayer structure contains the wiring structures therein, and has an air gap between the wiring structures.