SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20230290838A1

    公开(公告)日:2023-09-14

    申请号:US18181071

    申请日:2023-03-09

    CPC classification number: H01L29/405 H01L29/41791 H01L29/7851

    Abstract: A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.

    INDUCTION HEATING DEVICE INCLUDING BOARDS ON WHICH HEATING COILS AND VESSEL DETECTION COILS ARE PRINTED

    公开(公告)号:US20250081298A1

    公开(公告)日:2025-03-06

    申请号:US18882319

    申请日:2024-09-11

    Abstract: An induction heating device including a vessel detection coil layer that is patterned with a plurality of vessel detection coils printed thereon to detect a cooking vessel placed on the induction heating device; a plurality of heating coil pattern layers that are patterned with heating coils printed thereon; and an insulating layer between the plurality of heating coil pattern layers and the vessel detection coil layer, to insulate the plurality of heating coil pattern layers from the vessel detection coil layer, wherein the vessel detection coil layer, the plurality of heating coil pattern layers, and the insulating layer are in a stacked, hot-pressed heating coil board in which a thickness of the insulating layer is 140 μm or less.

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