公开(公告)号：US20240136356A1

公开(公告)日：2024-04-25

申请号：US18379731

申请日：2023-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeol Hae EOM ,  Byung Ha CHOI ,  Keun Hwi CHO ,  Sung Won KIM ,  Yuri MASUOKA ,  Won Cheol JEONG

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.

公开(公告)号：US20230290838A1

公开(公告)日：2023-09-14

申请号：US18181071

申请日：2023-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehun MYUNG ,  Yuri MASUOKA ,  Kihwang SON ,  Jaehun JEONG ,  Seulki PARK ,  Joongwon JEON ,  Kyunghoon JUNG ,  Yonghyun KO ,  Seungwook LEE

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/405 ,  H01L29/41791 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.

公开(公告)号：US20190295886A1

公开(公告)日：2019-09-26

申请号：US16238606

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungha CHOI ,  Yuri MASUOKA ,  Yul LEE

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285

Abstract: A semiconductor device including an active pattern on a substrate; a gate structure crossing the active pattern; a source/drain pattern on the active pattern at a side of the gate structure; a contact plug on the source/drain pattern; and a conductive pattern between the source/drain pattern and the contact plug, wherein the source/drain pattern includes a barrier layer adjacent to the conductive pattern, and wherein the barrier layer includes an oxygen atom.

公开(公告)号：US20220102555A1

公开(公告)日：2022-03-31

申请号：US17549985

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yul LEE ,  Yuri MASUOKA

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/762 ,  H01L29/08

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.

公开(公告)号：US20200312720A1

公开(公告)日：2020-10-01

申请号：US16901484

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Je-min YOO ,  Sang-deok KWON ,  Yuri MASUOKA

IPC: H01L21/8234 ,  H01L21/32 ,  H01L29/66

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

公开(公告)号：US20240234417A9

公开(公告)日：2024-07-11

申请号：US18379731

申请日：2023-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeol Hae EOM ,  Byung Ha CHOI ,  Keun Hwi CHO ,  Sung Won KIM ,  Yuri MASUOKA ,  Won Cheol JEONG

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.

公开(公告)号：US20190280123A1

公开(公告)日：2019-09-12

申请号：US16019811

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yul LEE ,  Yuri MASUOKA

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/28

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.