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公开(公告)号:US20230068587A1
公开(公告)日:2023-03-02
申请号:US17853205
申请日:2022-06-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yae Jung YOON , Eung Kyu KIM , Min Jun BAE , Kyoung Lim SUK , Seok Hyun LEE , Jae Gwon JANG
IPC: H01L23/498 , H01L23/00 , H01L23/31 , H01L25/18 , H01L23/053
Abstract: A semiconductor package including a passivation film, a mold layer on the passivation film, a connecting pad having a T shape, the T shape including a first portion and a second portion on the first portion, the first portion penetrating the passivation film, the second portion penetrating a part of the mold layer, a solder ball on the first portion of the connecting pad, an element on the second portion of the connecting pad, a wiring structure on the mold layer, the wiring structure including an insulating layer and a wiring pattern inside the insulating layer, and a semiconductor chip on the wiring structure may be provided.
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公开(公告)号:US20240014163A1
公开(公告)日:2024-01-11
申请号:US18312191
申请日:2023-05-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jong Youn KIM , Eung Kyu KIM , Min Jun BAE , Hyeon Seok LEE , Seok Kyu CHOI
IPC: H01L23/00 , H01L23/498 , H01L25/16
CPC classification number: H01L24/32 , H01L24/16 , H01L24/08 , H01L24/73 , H01L23/49827 , H01L23/49838 , H01L23/49866 , H01L25/162 , H01L2224/08235 , H01L24/48 , H01L2224/26175 , H01L2924/1205 , H01L2224/16168 , H01L2224/32155 , H01L2224/48228 , H01L2224/73204
Abstract: A semiconductor package includes a redistribution substrate having a first side and an opposite second side, a semiconductor chip on the first side of the redistribution substrate, a silicon capacitor on the second side of the redistribution substrate, a plurality of solder balls on the second side of the redistribution substrate and adjacent the silicon capacitor, and a metal pattern in the redistribution substrate and positioned between the silicon capacitor and the solder balls. The metal pattern includes a first portion extending in a first direction, and a second portion connected to the first portion and extending in a second direction different from the first direction.
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公开(公告)号:US20210111163A1
公开(公告)日:2021-04-15
申请号:US16885391
申请日:2020-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Min Jun BAE , Dong Kyu KIM , Jin-Woo PARK , Seok Hyun LEE
IPC: H01L25/10 , H01L25/065 , H01L25/00
Abstract: A semiconductor package includes a first redistribution layer. A plurality of posts is disposed on the first redistribution layer. A semiconductor chip is disposed on the first redistribution layer between the plurality of posts. A second redistribution layer is formed on the plurality of posts and the semiconductor chip. A first memory stack is disposed on the second redistribution layer. A height of each of the plurality of posts extends from an upper surface of the first redistribution layer to a lower surface of the second redistribution layer.
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