公开(公告)号：US20230074316A1

公开(公告)日：2023-03-09

申请号：US17826796

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soeun Shin ,  Minah Kim ,  Jin Choi

IPC: G03F1/36 ,  G03F1/86 ,  G03F1/78 ,  G03F1/70 ,  G03F7/20

Abstract: Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and performing model-based MPC on at least one of the plurality of unit cells. These methods may further include performing electron beam exposure based on the MTO design layout on which the MPC is performed. The performing model-based MPC on at least one of the plurality of unit cells may be based on at least one of an aspect ratio, sizes, curvatures of curved edges, density, and a duty of the plurality of curve patterns.