公开(公告)号：US10181427B2

公开(公告)日：2019-01-15

申请号：US15858403

申请日：2017-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Kyun Song ,  Yoon Tae Hwang ,  Kyu Min Lee ,  Soo Jung Choi

IPC: H01L29/49 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/28 ,  H01L29/423 ,  H01L29/78

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

公开(公告)号：US10438800B2

公开(公告)日：2019-10-08

申请号：US15825135

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Tae Hwang ,  Moon Kyun Song ,  Nam Gyu Cho ,  Kyu Min Lee ,  Soo Jung Choi ,  Yong Ho Ha ,  Sang Jin Hyun

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/786 ,  H01L29/78

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

公开(公告)号：US20180226300A1

公开(公告)日：2018-08-09

申请号：US15858403

申请日：2017-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Kyun Song ,  Yoon Tae Hwang ,  Kyu Min Lee ,  Soo Jung Choi

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/823821 ,  H01L27/0605 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/42372 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7856

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.