Semiconductor device
    2.
    发明授权

    公开(公告)号:US11367651B2

    公开(公告)日:2022-06-21

    申请号:US16902923

    申请日:2020-06-16

    Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20210020500A1

    公开(公告)日:2021-01-21

    申请号:US16902923

    申请日:2020-06-16

    Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

    Semiconductor device
    4.
    发明授权

    公开(公告)号:US12165916B2

    公开(公告)日:2024-12-10

    申请号:US17838740

    申请日:2022-06-13

    Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

    Semiconductor device
    5.
    发明授权

    公开(公告)号:US11349007B2

    公开(公告)日:2022-05-31

    申请号:US17015296

    申请日:2020-09-09

    Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.

Patent Agency Ranking