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公开(公告)号:US11314919B2
公开(公告)日:2022-04-26
申请号:US17022233
申请日:2020-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongdeok Kim , Munjun Seo , Bonghyun Lee
IPC: G06F30/30 , G06F30/3953 , G03F1/36 , G06F30/398 , G06F30/392
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an area-oriented region and a performance-oriented region, standard cells disposed on each of the area-oriented region and the performance-oriented region, and a routing metal layer on the standard cells. The routing metal layer includes first routing lines on the area-oriented region and second routing lines on the performance-oriented region. The smallest line width of the first routing lines is a first width, the smallest line width of the second routing lines is a second width greater than the first width, a pitch between the first routing lines is a first pitch, and a pitch between the second routing lines is a second pitch greater than the first pitch.
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公开(公告)号:US11995391B2
公开(公告)日:2024-05-28
申请号:US17702879
申请日:2022-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongdeok Kim , Munjun Seo , Bonghyun Lee
IPC: G06F30/392 , G03F1/36 , G06F30/3953 , G06F30/398
CPC classification number: G06F30/3953 , G03F1/36 , G06F30/392 , G06F30/398
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an area-oriented region and a performance-oriented region, standard cells disposed on each of the area-oriented region and the performance-oriented region, and a routing metal layer on the standard cells. The routing metal layer includes first routing lines on the area-oriented region and second routing lines on the performance-oriented region. The smallest line width of the first routing lines is a first width, the smallest line width of the second routing lines is a second width greater than the first width, a pitch between the first routing lines is a first pitch, and a pitch between the second routing lines is a second pitch greater than the first pitch.
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