公开(公告)号：US20160247553A1

公开(公告)日：2016-08-25

申请号：US15142491

申请日：2016-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Young LEE ,  Kyo-Min SOHN ,  Sang-Joon HWANG ,  Sung-Min SEO ,  Sang-Bo LEE ,  Nak-Won HEO

IPC: G11C11/406 ,  G11C29/44 ,  G11C11/408 ,  G11C17/16

CPC classification number: G11C11/40615 ,  G11C11/406 ,  G11C11/408 ,  G11C17/16 ,  G11C29/44 ,  G11C29/783 ,  G11C29/785 ,  G11C2029/4402

Abstract: A semiconductor memory device includes a memory cell array, a repair control circuit and a refresh control circuit. The memory cell array includes a plurality of memory cells and a plurality of redundancy memory cells. The repair control circuit receives a repair command and performs a repair operation on a first defective memory cell among the plurality of memory cells during a repair mode. The semiconductor memory device may operate in a repair mode in response to the repair command. The refresh control circuit performs a refresh operation on non-defective ones of the plurality of memory cells during the repair mode.

公开(公告)号：US20140241085A1

公开(公告)日：2014-08-28

申请号：US14076401

申请日：2013-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Je-Min RYU ,  Sung-Min SEO ,  Yong-Ho CHO ,  Nak-Won HEO

IPC: G11C29/04

CPC classification number: G11C29/04 ,  G11C17/16 ,  G11C2029/4402

Abstract: A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data.

Abstract translation: 提供了一种使用反熔丝执行禁止操作的半导体存储器件及其方法。 根据示例实施例的半导体存储器件包括：熔丝电路，其包括被配置为存储熔丝数据的至少一个反熔丝;存储器电路，被配置为存储在存储单元中的读取数据中的至少一个，并将数据写入存储器单元; 熔丝控制器，被配置为基于所述熔丝数据来禁止所述存储器电路的读/写操作。

公开(公告)号：US20170092349A1

公开(公告)日：2017-03-30

申请号：US15372750

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Young Lee ,  Kyo-Min SOHN ,  Sang-Joon HWANG ,  Sung-Min SEO ,  Sang-Bo LEE ,  Nak-Won HEO

IPC: G11C11/406 ,  G11C11/408 ,  G11C29/44 ,  G11C17/16

CPC classification number: G11C11/40615 ,  G11C11/406 ,  G11C11/408 ,  G11C17/16 ,  G11C29/44 ,  G11C29/783 ,  G11C29/785 ,  G11C2029/4402

Abstract: A semiconductor memory device includes a memory cell array, a repair control circuit and a refresh control circuit. The memory cell array includes a plurality of memory cells and a plurality of redundancy memory cells. The repair control circuit receives a repair command and performs a repair operation on a first defective memory cell among the plurality of memory cells during a repair mode. The semiconductor memory device may operate in a repair mode in response to the repair command. The refresh control circuit performs a refresh operation on non-defective ones of the plurality of memory cells during the repair mode.

公开(公告)号：US20140219000A1

公开(公告)日：2014-08-07

申请号：US14107199

申请日：2013-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chi-Sung OH ,  Chul-Sung PARK ,  Nak-Won HEO ,  Dong-Hyun SOHN

IPC: G11C17/16 ,  G11C29/52 ,  G06F12/14

CPC classification number: G11C17/16 ,  G06F12/1433 ,  G06F2212/2142 ,  G11C7/24 ,  G11C17/18 ,  G11C29/785 ,  G11C2029/4402

Abstract: A method of programming a memory device including a one-time programmable (OTP) cell array configured to include at least one of a protected area and a programmable area are disclosed. The method includes receiving a fuse-program command to initiate a fuse-programming operation; checking whether the programmable area exists in the OTP cell array, terminating the fuse-programming operation when the OTP cell array does not include the programmable area, performing a fuse-programming operation on the programmable area when the OTP cell array includes the programmable area thereby programming fuses to create a fuse-programmed area; setting the fuse-programmed area of the OTP cell array as the protected area.

Abstract translation: 公开了一种编程包括被配置为包括保护区域和可编程区域中的至少一个的一次可编程（OTP）单元阵列的存储器件的方法。 该方法包括接收熔丝编程命令以启动熔丝编程操作; 检查OTP单元阵列中是否存在可编程区域，当OTP单元阵列不包括可编程区域时终止熔丝编程操作，当OTP单元阵列包括可编程区域时在可编程区域上执行熔丝编程操作，从而 编程保险丝创建熔丝编程区域; 将OTP单元阵列的熔丝编程区域设置为保护区域。