公开(公告)号：US20240203499A1

公开(公告)日：2024-06-20

申请号：US18468345

申请日：2023-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Philkyu KANG ,  Chihyun KIM ,  Junehong PARK ,  Jayang YOON ,  Chiweon YOON ,  Dojeon LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/24 ,  G11C16/30

CPC classification number: G11C16/08 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/30

Abstract: Provided is a method of operating a nonvolatile memory device including a voltage generator, the method including calculating a difference between a voltage level of a first word line node and a voltage level of a second word line node, changing a first reference voltage level of the voltage generator to a second reference voltage level based on the difference between the voltage levels, and determining a target voltage level based on any one of the first reference voltage level and the second reference voltage level. The first word line node may be closer from an output terminal of the voltage generator than the second word line node.