公开(公告)号：US20170271367A1

公开(公告)日：2017-09-21

申请号：US15612349

申请日：2017-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon BAEK ,  Sang-kyu OH ,  Jung-Ho DO ,  Sun-young PARK ,  Seung-young LEE ,  Hyo-sig WON

IPC: H01L27/118 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/42384 ,  H01L29/6681 ,  H01L29/785 ,  H01L2027/11875

Abstract: An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction that is perpendicular to the first direction, first contacts respectively disposed at two sides of at least one conductive line from among the plurality of conductive lines, and a second contact disposed on the at least one conductive line and the first contacts and forming a single node by being electrically connected to the at least one conductive line and the first contacts.

公开(公告)号：US20170125416A1

公开(公告)日：2017-05-04

申请号：US15403694

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon BAEK ,  Sang-kyu OH

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/12 ,  H01L21/84 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/845 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/1211 ,  H01L29/6681

Abstract: A semiconductor integrated circuit (IC) may comprise at least one cell comprising at least one fin field-effect transistor (FET). The at least one cell may comprise a plurality of fins that extend in a first direction and are arranged in parallel to each other in a second direction that is perpendicular to the first direction. A size of the at least one cell in the second direction may correspond to a number and a pitch of the plurality of fins.